Browsing by Author "Ревенко, Катерина"

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    Механізм електропровідності термометричного матеріалу TіNi1-xCoxSn
    (Видавництво Національного університету «Львівська політехніка», 2009) Ревенко, Катерина; Ромака, Віталій
    Crystal structure, density of electron states and electrotransport characteristics of the heavy, Co impurity, doped n-TiNiSn intermetallic semiconductor (N=9,5*10+1,9*10cm) were investigated in the T=80+380K temperature range. The variable degree of the occupation of Ni and Ti atomic positions Co atomic in the TiNi1-xCoxSn, x<0,003, lattices was established. It is equivalent to introducnion in this semiconductor the of acceptor and donor impurities.