Browsing by Author "Druzhinin, Anatolij"

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    CMOS image sensor on microcavities and local SOI-structures
    (Видавництво Львівської політехніки, 2012) Druzhinin, Anatolij; Holota, Victor; Kogut, Igor; Dovgyj, Victor; Khoverko, Yuriy
    The structure of sensor images on "silicon-oninsulator"local structures is proposed and possibility of monolithic integration of sensing elements and signal processing systems is shown.
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    Design of photoelectric convertors on the basis of Si-Ge solid solutions
    (Видавництво Національного університету "Львівська політехніка", 2002) Druzhinin, Anatolij; Ostrovskii, Igor; Liakh, Natalia; Lviv Polytechnic National University
    Electric and photoelectric properties of Si1-xGex (x=0.1) whiskers were investigated. The whiskers were grown by method of chemical transport reactions in closed Si-Ge-Au-Hf-Br system. Concentration of Hf in whiskers is 1,6⋅10-2 3, concentration of Au is 10-3 3. The samples have n-type conductivity; their resistivity ρ changes from 0.5 to 12 Ω⋅cm depending on the whisker diameter. The whisker diameters change from 10 to 80 µm, the whisker length is equal to 0,5÷5 mm. The whiskers were shown to be photosensitive both in photovoltaic and in photoresistive regimes. Photo-e.m.f. value is about 100 mV in the whisker with small diameter (d=20 µm) and it decreases at a rise of the whisker diameters from 20 to 80 µm. Appearance of photo-e.m.f. is caused by existance of Shotki barrier in SiGe-Pt contact to the whiskers. Dimensional effect of the whisker photo-e.m.f. is explained by the dimensional dependence of the whisker resistivity. High values of photo-e.m.f. for Si-Ge whiskers allow their using for photoconvertor design.