Browsing by Author "Kolin, N."

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    The behaviour of insb under the irradiation with reactor neutrons
    (Видавництво Національного університету "Львівська політехніка", 2004) Bolshakova, I.; Brudnyi, V.; Kolin, N.; Koptsev, P.; Kost, Ya.; Kovaleva, N.; Makido, O.; Moskovets, T.; Shoorigin, F.
    In the paper, is investigated the influence of the irradiation with full reactor neutron spectrum up to the fluence of F=31016 cm'2 upon the electrophysical properties of complex doped InSb microcrystals and thin film InSb samples with charge carrier concentration of n=(9‘1016^3‘1018) cm'3. The influence of the initial doping level on the radiation resistance is determined. The optimal charge carrier concentration for the manufacturing of the radiation resistant magnetic field microsensors is determined and is equal to n=(6^7)‘1017 cm'3 for the complex doped InSb microcrystals, and n=3-1017 cm'3 for thin film samples.
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    The radiation hardness of magnetic sensors and devices in extreme conditions of irradiation with high neutron fluxes
    (Видавництво Національного університету «Львівська політехніка», 2004) Bolshakova, I.; Brudnyi, V.; Boiko, V.; Kolin, N.; Kumada, М.; Leroy, C.; Merkurisov, D. D.
    The radiation hard magnetic field sensors are based on indium antimonide semiconductor compound microcrystals. The tests performed have shown the high stability of their characteristics under irradiation with reactor neutrons up to very high fluences of 1016^1018 n-cm-2. The magneto-measuring facility has been built with measurement channels of high accuracy of 0.01%.