Luchechko, A.Vasyltsiv, V.Kostyk, L.Tsvetkova, O.2018-04-022018-04-022017-05-292017-05-29Deep Levels in β-Ga2O3 Single Crystals Doped with Mg2+ Ions / A. Luchechko, V. Vasyltsiv, L. Kostyk, O. Tsvetkova // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 56. — (2 active media fundamentals: crystal structure and defects).https://ena.lpnu.ua/handle/ntb/4016756enDeep Levels in β-Ga2O3 Single Crystals Doped with Mg2+ IonsConference Abstract© Національний університет “Львівська політехніка”, 20171Deep Levels in β-Ga2O3 Single Crystals Doped with Mg2+ Ions / A. Luchechko, V. Vasyltsiv, L. Kostyk, O. Tsvetkova // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 56. — (2 active media fundamentals: crystal structure and defects).