Nowicki, M.Nowak, P.Szewczyk, R.2018-04-022018-04-022017-05-292017-05-29Nowicki M. Negative Dynamic Resistance andMemristive Effects in Zincite-Tungsten Semiconductor Junction / M. Nowicki, P. Nowak, R. Szewczyk // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 118. — (4 resistivity switching and transport phenomena).https://ena.lpnu.ua/handle/ntb/40233118enNegative Dynamic Resistance andMemristive Effects in Zincite-Tungsten Semiconductor JunctionConference Abstract© Національний університет “Львівська політехніка”, 20171Nowicki M. Negative Dynamic Resistance andMemristive Effects in Zincite-Tungsten Semiconductor Junction / M. Nowicki, P. Nowak, R. Szewczyk // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 118. — (4 resistivity switching and transport phenomena).