Onanko, A. P.Prodayvoda, G. T.Onanko, Y. A.Shabatura, A. V.Onischenko, A. N.2018-04-022018-04-022017-05-292017-05-29Inelastic Defect Characteristic Internal Friction in SiO2, GeSi and Anisotropy Automated System “KERN-DP” / A. P. Onanko, G. T. Prodayvoda, Y. A. Onanko, A. V. Shabatura, A. N. Onischenko // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 55. — (2 active media fundamentals: crystal structure and defects).https://ena.lpnu.ua/handle/ntb/4016655enInelastic Defect Characteristic Internal Friction in SiO2, GeSi and Anisotropy Automated System “KERN-DP”Conference Abstract© Національний університет “Львівська політехніка”, 20171Inelastic Defect Characteristic Internal Friction in SiO2, GeSi and Anisotropy Automated System “KERN-DP” / A. P. Onanko, G. T. Prodayvoda, Y. A. Onanko, A. V. Shabatura, A. N. Onischenko // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 55. — (2 active media fundamentals: crystal structure and defects).