Iwanowski, P.Hruban, A.Piotrowski, K.Diduszko, R.2018-04-022018-04-022017-05-292017-05-29Electric Transport Properties of Sn-Dopped Bi2Te2Se Topological Insulators / P. Iwanowski, A. Hruban, K. Piotrowski, R. Diduszko // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 166. — (5 materials for quantum and optoelectronics and detectors of radiation).https://ena.lpnu.ua/handle/ntb/40052166enElectric Transport Properties of Sn-Dopped Bi2Te2Se Topological InsulatorsConference Abstract© Національний університет “Львівська політехніка”, 20171Electric Transport Properties of Sn-Dopped Bi2Te2Se Topological Insulators / P. Iwanowski, A. Hruban, K. Piotrowski, R. Diduszko // Oxide Materials for Electronic Engineering – fabrication, properties and applications : book of abstracts international conference, May 29–June 2, 2017 Lviv, Ukraine. — Lviv, 2017. — P. 166. — (5 materials for quantum and optoelectronics and detectors of radiation).