Method of parameter control of dielectric layer phase thickness on Si crystal surface

Abstract

Conditions for the formation of light wave reflection amplitude spectra minima by the three-layer system of interfaces of the type: vacuum - oxide plane-parallel layer (resonator) - bulk crystal in the phonon region are investigated. Analytic expressions connecting the frequency that corresponds to the minimum of reflection contour with the parameters of dielectric films and resonant excitation of bulk TO-phonon are obtained.