Browsing by Author "Luka, G."

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    Electroluminescence properties of ZnO/Alq3/pegde/Al structure
    (Видавництво національного університету „Львівська політехніка”, 2009) Hotra, Z.; Stakhira, P.; Volynyuk, D.; Cherpak, V.; Luka, G.; Godlewski, M.; Guziewicz, E.; Pakhomov, G.; Tsizh, B.
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    Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures
    (Видавництво Львівської політехніки, 2012) Krajewski, T. A.; Smertenko, P. S.; Luka, G.; Wachnicki, L.; Cherevko, A.; Olkhovik, G.; Zakrzewski, A. J.; Godlewski, M.; Guziewicz, E.
    This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.
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    ZnMgO:Al anode layer for organic light emitting diode based on carbazole derivative
    (Видавництво Львівської політехніки, 2012) Luka, G.; Volyniuk, D.; Tomkeviciene, A.; Simokaitiene, J.; Grazulevicius, J. V.; Stakhira, P.; Cherpak, V.; Sybilski, P.; Witkowski, B. S.; Godlewski, M.; Guziewicz, E.; Hotra, Z.; Hotra, O.
    We demonstrate the fabrication and properties of an near ultraviolet organic light emitting diode (UV OLED) that contains 2,7-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole organic emitting layer and aluminumdoped magnesium zinc oxide (ZnMgO:Al) layer as transparent electrode. The obtained ZnMgO:Al layer is transparent for the wavelengths longer than 325 nm and has low resistivity of the order of 10-3 cm. The UV OLED device turns on at the applied voltage of 9 V.