Browsing by Author "Wachnicki, L."

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Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures
(Видавництво Львівської політехніки, 2012) Krajewski, T. A.; Smertenko, P. S.; Luka, G.; Wachnicki, L.; Cherevko, A.; Olkhovik, G.; Zakrzewski, A. J.; Godlewski, M.; Guziewicz, E.
This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.
Homogenous and heterogeneous magnetism in (Zn,Co)O
(Видавництво Львівської політехніки, 2012) Sawicki, M.; Guziewicz, E.; Lukasiewicz, M. I.; Proselkov, O.; Kowalik, I. A.; Dluzewski, P.; Paszkowicz, W.; Jakiela, R.; Witkowski, B. S.; Wachnicki, L.; Stefanowicz, W.; Sztenkiel, D.; Godlewski, M.; Dietl, T.
For more than a decade ZnO doped with Mn and Co has remained as one of the most prospected diluted magnetic semiconductor for spintronic applications with conflicting outcome concerning the genuineness of its room temperature ferromagnetism. In order to clarify this issue we investigate (Zn,Co)O layers grown by atomic layer deposition at low temperatures. We employ and relay on wide range of extensive material characterization, which in combination with superconducting quantum interference device magnetometry allow us decisively exemplify the growth temperature as the key factor discriminating between paramagnetic (obtained at 160 oC) and various forms of ferromagnetic responses, seen when the grows is carried out at 200 oC and above.
Homogenous and heterogeneous magnetism in (Zn,Co)O
(Видавництво Львівської політехніки, 2012) Sawicki, M.; Lukasiewicz, M. I.; Proselkov, O.; Kowalik, I. A.; Dluzewski, P.; Paszkowicz, W.; Jakiela, R.; Witkowski, B. S.; Wachnicki, L.; Stefanowicz, W.; Sztenkiel, D.; Godlewski, M.; Dietl, T.; Guziewicz, E.
For more than a decade ZnO doped with Mn and Co has remained as one of the most prospected diluted magnetic semiconductor for spintronic applications with conflicting outcome concerning the genuineness of its room temperature ferromagnetism. In order to clarify this issue we investigate (Zn,Co)O layers grown by atomic layer deposition at low temperatures. We employ and relay on wide range of extensive material characterization, which in combination with superconducting quantum interference device magnetometry allow us decisively exemplify the growth temperature as the key factor discriminating between paramagnetic (obtained at 160 oC) and various forms of ferromagnetic responses, seen when the grows is carried out at 200 oC and above.