Browsing by Author "Guziewicz, E."

Now showing 1 - 8 of 8

Electroluminescence properties of ZnO/Alq3/pegde/Al structure
(Видавництво національного університету „Львівська політехніка”, 2009) Hotra, Z.; Stakhira, P.; Volynyuk, D.; Cherpak, V.; Luka, G.; Godlewski, M.; Guziewicz, E.; Pakhomov, G.; Tsizh, B.
Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures
(Видавництво Львівської політехніки, 2012) Krajewski, T. A.; Smertenko, P. S.; Luka, G.; Wachnicki, L.; Cherevko, A.; Olkhovik, G.; Zakrzewski, A. J.; Godlewski, M.; Guziewicz, E.
This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.
Homogenous and heterogeneous magnetism in (Zn,Co)O
(Видавництво Львівської політехніки, 2012) Sawicki, M.; Guziewicz, E.; Lukasiewicz, M. I.; Proselkov, O.; Kowalik, I. A.; Dluzewski, P.; Paszkowicz, W.; Jakiela, R.; Witkowski, B. S.; Wachnicki, L.; Stefanowicz, W.; Sztenkiel, D.; Godlewski, M.; Dietl, T.
For more than a decade ZnO doped with Mn and Co has remained as one of the most prospected diluted magnetic semiconductor for spintronic applications with conflicting outcome concerning the genuineness of its room temperature ferromagnetism. In order to clarify this issue we investigate (Zn,Co)O layers grown by atomic layer deposition at low temperatures. We employ and relay on wide range of extensive material characterization, which in combination with superconducting quantum interference device magnetometry allow us decisively exemplify the growth temperature as the key factor discriminating between paramagnetic (obtained at 160 oC) and various forms of ferromagnetic responses, seen when the grows is carried out at 200 oC and above.
Homogenous and heterogeneous magnetism in (Zn,Co)O
(Видавництво Львівської політехніки, 2012) Sawicki, M.; Lukasiewicz, M. I.; Proselkov, O.; Kowalik, I. A.; Dluzewski, P.; Paszkowicz, W.; Jakiela, R.; Witkowski, B. S.; Wachnicki, L.; Stefanowicz, W.; Sztenkiel, D.; Godlewski, M.; Dietl, T.; Guziewicz, E.
For more than a decade ZnO doped with Mn and Co has remained as one of the most prospected diluted magnetic semiconductor for spintronic applications with conflicting outcome concerning the genuineness of its room temperature ferromagnetism. In order to clarify this issue we investigate (Zn,Co)O layers grown by atomic layer deposition at low temperatures. We employ and relay on wide range of extensive material characterization, which in combination with superconducting quantum interference device magnetometry allow us decisively exemplify the growth temperature as the key factor discriminating between paramagnetic (obtained at 160 oC) and various forms of ferromagnetic responses, seen when the grows is carried out at 200 oC and above.
Optical Properties of Epitaxial ZnO-ALD Films Implanted with Rare Earth
(2017-05-29) Guziewicz, E.; Ratajczak, R.; Stachowicz, M.; Krajewski, T. A.; Snigurenko, D.; Turos, A.; Institute of Physics, Polish Academy of Sciences, Warsaw, Poland; National Centre for Nuclear Research, Świerk, Poland; Institute of Electronic Materials Technology, Warsaw, Poland
Zinc Oxide Films Implanted with Rare Earth (RE) for Optoelectronic Applications
(2017-05-29) Demchenko, I. N.; Melikhov, Y.; Konstantynov, P.; Ratajczak, R.; Turos, A.; Guziewicz, E.; Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland; School of Engineering Cardiff University, Cardiff, CF24 3AA, United Kingdom; National Centre for Nuclear Research, Soltana 7, 05-400 Otwock, Poland; Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland
ZnMgO:Al anode layer for organic light emitting diode based on carbazole derivative
(Видавництво Львівської політехніки, 2012) Luka, G.; Volyniuk, D.; Tomkeviciene, A.; Simokaitiene, J.; Grazulevicius, J. V.; Stakhira, P.; Cherpak, V.; Sybilski, P.; Witkowski, B. S.; Godlewski, M.; Guziewicz, E.; Hotra, Z.; Hotra, O.
We demonstrate the fabrication and properties of an near ultraviolet organic light emitting diode (UV OLED) that contains 2,7-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole organic emitting layer and aluminumdoped magnesium zinc oxide (ZnMgO:Al) layer as transparent electrode. The obtained ZnMgO:Al layer is transparent for the wavelengths longer than 325 nm and has low resistivity of the order of 10-3 cm. The UV OLED device turns on at the applied voltage of 9 V.
ZnTe nanowires overgrown by atomic layer deposited (Zn,Co) oxides: raman scattering studies
(Видавництво Львівської політехніки, 2012) Gas, K.; Dynowska, E.; Łukasiewicz, M.; Wiater, M.; Witkowski, B. S.; Guziewicz, E.; Godlewski, M.; Kamińska, A.; Hołyst, R.; Wojtowicz, T.; Szuszkiewicz, W.
Micro-Raman measurements were performed to study the vibrational properties of molecular beam epitaxy grown ZnTe nanowires (NWs) with atomic layer deposited (Zn,Co) oxides shell. A significant decrease of relative intensity of structures related to the ZnTe (NWs core) and Te (precipitates) phonons, resulting from the overgrowth of the NWs by the oxide shells is observed. The dependence of the Raman spectra on the laser power is shown and discussed. It is demonstrated that the crystallization of amorphous oxide shell and formation of Co3O4 crystals can be induced by increasing laser power during the measurements.