Browsing by Author "Krajewski, T. A."
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Item Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures(Видавництво Львівської політехніки, 2012) Krajewski, T. A.; Smertenko, P. S.; Luka, G.; Wachnicki, L.; Cherevko, A.; Olkhovik, G.; Zakrzewski, A. J.; Godlewski, M.; Guziewicz, E.This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.Item Optical Properties of Epitaxial ZnO-ALD Films Implanted with Rare Earth(2017-05-29) Guziewicz, E.; Ratajczak, R.; Stachowicz, M.; Krajewski, T. A.; Snigurenko, D.; Turos, A.; Institute of Physics, Polish Academy of Sciences, Warsaw, Poland; National Centre for Nuclear Research, Świerk, Poland; Institute of Electronic Materials Technology, Warsaw, Poland