Browsing by Author "Popielarski, P."

Now showing 1 - 3 of 3

Admittance and photoadmittance spectroscopy of zinc oxide layers grown on p-Si substrates by sol−gel and spin coating method
(Видавництво Львівської політехніки, 2012) Popielarski, P.; Bała, W.; Paprocki, K.
In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K - 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 0.1 Hz - to 5 MHz frequencies with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trapcontrolled space charge conduction in the bulk of the sample.
Optical and electrical properties of ZnO thin films grown by sol-gel method
(Видавництво Львівської політехніки, 2012) Bała, W.; Zorenko, Yu.; Savchyn, V; Voznyak, T.; Paprocki, K.; Popielarski, P.; Szybowicz, M.
The ZnO thin films have been produced on p-type Si by the dip-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V, Q-DLTS measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.
Raman and impedance spectroscopy of blend polycarbonate and inc oxide layers grown by sol−gel method
(Видавництво Львівської політехніки, 2012) Popielarski, P.; Paprocki, K.; Bała, W.; Banaszak-Piechowska, A.; Walczyk, K.; Fabisia, K.; Szybowicz, M.
Confocal Raman spectroscopy has been applied to investigate blend polycarbonate and ZnO thin layers with different thicknesses and different content of ZnO. The admittance spectroscopy has been applied to correlation of optical and electrical properties of these layers used in electroluminescence diodes and photovoltaic cells. The thermally stimulated current (TSC) and I-V (DC and AC) characteristics have been applied to the study of the deep levels in ZnO thin films grown by sol−gel method onto Si substrates. The surface morphology of the samples were investigated by scanning microscopy and X ray diffraction.