Browsing by Author "Shulgov, V."

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    Electrochemical aluminium oxide technology for production of electronics
    (Видавництво Львівської політехніки, 2012) Sokol, V.; Shulgov, V.
    The paper reviews the results of application of porous alumina formed using the electrochemical anodization process. Porous alumina is widely used in the microelectronics as a) anodized aluminum bases, b)systems of multilevel interconnections, c) aluminum packages for VLSIs and hybrid integrated circuits, d) thin-film temperature sensors, e) Al-based heating elements etc. Parameters of the structures with porous anodic alumina are summarized depending on the anodizing conditions.
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    Mechanical properties of free standing porous anodic alumina films
    (Видавництво Львівської політехніки, 2012) Ignashev, E.; Shulgov, V.
    Free-standing films of anodic alumina obtained from the one-sided anodization of aluminum were studied. The flexural strength of free-standing porous anodic alumina films to the lateral bending, circular bending, and microhardness were studied.
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    The Increase in Thermal Stability of Anodic Alumina Films on Aluminum
    (2017-05-29) Shulgov, V.; Belarusian State University of Informatics and Radioelectronics (BSUIR)