Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3)
Date
2017-12-23
Journal Title
Journal ISSN
Volume Title
Publisher
Видавництво Львівської політехніки
Lviv Polytechnic Publishing House
Lviv Polytechnic Publishing House
Abstract
The process of synthesis of indium sulphide
(In2S3) semiconductor thin films by a chemical synthesis
method was done. The acetic acid has been used as a
complexing agent. Ivestigations of thin films properties were
carried out by using X-ray powder diffraction, scanning
eletron microscopy, optical spectroscopy. The phase
composition, optical transmission and absorption spectra of
In2S3 films were studied. The value of bang gap energy has
been experimentally determined from spectral dependences of
optical transmission of In2S3 films, and ranges from 2,31 to
2,55 eV.
Description
Keywords
indium sulfide, chemical deposition, semiconductor films, thin films, structure and morphology of thin films
Citation
Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3) / Roman Hlad, Pavlo Shapoval, Vitalii Stadnik, Martyn Sozanskiy, Ruslana Guminilovych, Yosyp Yatchyshyn // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 54–55. — (6th International academic conference «Chemistry & chemical technology 2017» (CCT-2017)).