Irradiation-resistant magnetic field microsensors

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Date

2013

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Видавництво Львівської політехніки

Abstract

A technology developed for creating radiationresistant magnetic field sensors based on semiconductor binary compounds of III-V group (InSb, InAs, GaAs) and their solid solutions (InXGa1-XAs, InAsXIn1-X) is presented. Studies have confirmed such sensors’ operability in neutron fluxes up to high fluences. This has made possible their use in magnetic measuring instrumentation for magnetic field diagnostics in thermonuclear reactors. The instrumentation comprises a 3D probe with Hall sensors and electronics characterized by the function of in-situ self-calibration, which makes available periodic calibration of sensors without their reinstallation, leading to high measurement accuracy. The magnetic measuring instrumentation developed by the team has been applied in European reactors TORE SUPRA (France) and JET (UK), and is aimed at solving tasks at a new charged particle accelerator – collider NICA (Russia).

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Keywords

semiconductors of III-V group, magnetic field sensors, magnetic measuring instrumentation, high-energy irradiation, radiation resistance, magnetic diagnostics, charged particle accelerators

Citation

Irradiation-resistant magnetic field microsensors / Inessa Bolshakova, Volodymyr Yerashok, Yuriy Zagachevskyi, Olena Makido, Serhiy Tymoshyn, Roman Stetsko, Nazar Kokoten, Oleksandr Prykhodko, Fedir Shurygin // Комп'ютерні науки та інженерія : матеріали VІ Міжнародної конференції молодих вчених CSE-2013, 21–23 листопада 2013 року, Україна, Львів / Міністерство освіти і науки України, Національний університет "Львівська політехніка". – Львів : Видавництво Львівської політехніки, 2013. – С. 34-35. – (4-й Міжнародний молодіжний фестиваль науки "Litteris et Artibus"). – Bibliography: 4 titles.

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