The heat treatment influence on the main quality indicators of Ag/n-n+GaAs heterojunctions

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dc.citation.conference7th International youth science forum «Litteris et Artibus»
dc.citation.epage403
dc.citation.journalTitleLitteris et Artibus : матеріали
dc.citation.spage402
dc.contributor.affiliationZaporizhzhya State Engineering Academy
dc.contributor.authorDmitriev, Vadim
dc.coverage.placenameЛьвів
dc.coverage.placenameLviv
dc.coverage.temporal23–25 листопада 2017 року
dc.coverage.temporal23–25 November, 2017
dc.date.accessioned2018-04-12T13:05:51Z
dc.date.available2018-04-12T13:05:51Z
dc.date.created2017-12-23
dc.date.issued2017-12-23
dc.description.abstractThe effect of heat treatment on the parameters and characteristics of Ag/n-n+GaAs heterojunctions is studied. Various methods for the Schottky barrier height and the nonideality factor determining have been examined and tested. The most accurate method for determining the heterojunction parameters using the current-voltage characteristic was found.
dc.format.extent402-403
dc.format.pages2
dc.identifier.citationDmitriev V. The heat treatment influence on the main quality indicators of Ag/n-n+GaAs heterojunctions / Vadim Dmitriev // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 402–403. — (9th International academic conference «Computer science & engineering 2017» (CSE-2017)).
dc.identifier.citationenDmitriev V. The heat treatment influence on the main quality indicators of Ag/n-n+GaAs heterojunctions / Vadim Dmitriev // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 402–403. — (9th International academic conference «Computer science & engineering 2017» (CSE-2017)).
dc.identifier.isbn978-966-941-108-2
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/40441
dc.language.isoen
dc.publisherВидавництво Львівської політехніки
dc.publisherLviv Polytechnic Publishing House
dc.relation.ispartofLitteris et Artibus : матеріали, 2017
dc.relation.ispartofLitteris et Artibus : proceedings, 2017
dc.relation.references[1] P. Jayavel, J. Kumar, P. Ramasam, R. Premanand, “On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs”, Indian Journal of Engineering and Materials Sciences, Vol. 7, №5-6. – pp. 340–343, 2001.
dc.relation.references[2] Dmy`triyev V.S. “Inzhektuyuchi bar'yerni perehody` na osnovi arsenidu galiya dlya pry`ladiv NVCh diapazonu” Progresy`vni texnologiyi ta pry`lady`, № 10(1), pp. 50-53, 2017.
dc.relation.references[3] A. V. Belyaev, N. S. Boltovecz, E. F. Venger y` dr., “Fy`zy`chesky`e metodi dy`agnosty`ky` v my`kro- y` nanoelektrony`ke”, Khar`kov, Y`SMA, 284 p., 2011.
dc.relation.references[4] S. M. Sze, K. K. Ng “Physics of Semiconductor Devices, 3rd Edition”, Hoboken, A John Wiley & Sons, Inc., 815 р., 2007.
dc.relation.references[5] E. H. Rhoderick, R. H. Williams, “Metal-Semiconductor Contacts”, Oxford, Clarendon Press, 252 p., 1988.
dc.relation.references[6] S. Chand, L. Kamar, “Origin of non-ideal currentvoltage characteristics of metal-semiconductor contact: A numerical study”, Indian Journal of Engineering & Materials Sciences. Vol. 7, № 5-6. pp. 268–273, 2000.
dc.relation.references[7] Kudryk Ya.Ya., Shynkarenko V.V., Slipokurov V.S., Bigun R.I., Kudryk Ya.Ya, “Methods for determination of Schottky barrier height from I-V curves”, CriMiCo’2014, September 7-13, Sevastopol, Crimea, pp. 673-674. 2014.
dc.relation.references[8] M. P. Hernández, C. F. Alonso, J. L. Peña, “Barrier height determination in homogeneous nonideal Schottky contacts”, Journal of Physics D: Applied Physics, Vol. 34, №8, pp. 1157–1162, 2001.
dc.relation.references[9] N. Karaboga, S. Kockanat, H. Dogan, “The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony”, Applied Intelligence, Vol. 38, № 3. pp. 279–288, 2013.
dc.relation.references[10] A. Ortiz-Conde, Y. Ma, J. Thomson, etc, “Direct extraction of semiconductor deviceparameters using lateral optimization method”, Solid-State Electronics, Vol. 43, №4. pp. 845–848, 1999.
dc.relation.referencesen[1] P. Jayavel, J. Kumar, P. Ramasam, R. Premanand, "On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs", Indian Journal of Engineering and Materials Sciences, Vol. 7, No 5-6, pp. 340–343, 2001.
dc.relation.referencesen[2] Dmy`triyev V.S. "Inzhektuyuchi bar'yerni perehody` na osnovi arsenidu galiya dlya pry`ladiv NVCh diapazonu" Progresy`vni texnologiyi ta pry`lady`, No 10(1), pp. 50-53, 2017.
dc.relation.referencesen[3] A. V. Belyaev, N. S. Boltovecz, E. F. Venger y` dr., "Fy`zy`chesky`e metodi dy`agnosty`ky` v my`kro- y` nanoelektrony`ke", Khar`kov, Y`SMA, 284 p., 2011.
dc.relation.referencesen[4] S. M. Sze, K. K. Ng "Physics of Semiconductor Devices, 3rd Edition", Hoboken, A John Wiley & Sons, Inc., 815 r., 2007.
dc.relation.referencesen[5] E. H. Rhoderick, R. H. Williams, "Metal-Semiconductor Contacts", Oxford, Clarendon Press, 252 p., 1988.
dc.relation.referencesen[6] S. Chand, L. Kamar, "Origin of non-ideal currentvoltage characteristics of metal-semiconductor contact: A numerical study", Indian Journal of Engineering & Materials Sciences. Vol. 7, No 5-6. pp. 268–273, 2000.
dc.relation.referencesen[7] Kudryk Ya.Ya., Shynkarenko V.V., Slipokurov V.S., Bigun R.I., Kudryk Ya.Ya, "Methods for determination of Schottky barrier height from I-V curves", CriMiCo’2014, September 7-13, Sevastopol, Crimea, pp. 673-674. 2014.
dc.relation.referencesen[8] M. P. Hernández, C. F. Alonso, J. L. Peña, "Barrier height determination in homogeneous nonideal Schottky contacts", Journal of Physics D: Applied Physics, Vol. 34, No 8, pp. 1157–1162, 2001.
dc.relation.referencesen[9] N. Karaboga, S. Kockanat, H. Dogan, "The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony", Applied Intelligence, Vol. 38, No 3. pp. 279–288, 2013.
dc.relation.referencesen[10] A. Ortiz-Conde, Y. Ma, J. Thomson, etc, "Direct extraction of semiconductor deviceparameters using lateral optimization method", Solid-State Electronics, Vol. 43, No 4. pp. 845–848, 1999.
dc.rights.holder© Національний університет “Львівська політехніка”, 2017
dc.subjectheterojunction
dc.subjectcurrent-voltage characteristic
dc.subjectbarrier height
dc.subjectnonideality factor
dc.subjectsilver
dc.titleThe heat treatment influence on the main quality indicators of Ag/n-n+GaAs heterojunctions
dc.typeConference Abstract

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