Admittance and photoadmittance spectroscopy of zinc oxide layers grown on p-Si substrates by sol−gel and spin coating method
dc.contributor.author | Popielarski, P. | |
dc.contributor.author | Bała, W. | |
dc.contributor.author | Paprocki, K. | |
dc.date.accessioned | 2012-10-10T13:06:12Z | |
dc.date.available | 2012-10-10T13:06:12Z | |
dc.date.issued | 2012 | |
dc.description.abstract | In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K - 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 0.1 Hz - to 5 MHz frequencies with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trapcontrolled space charge conduction in the bulk of the sample. | uk_UA |
dc.identifier.citation | Popielarski P. Admittance and photoadmittance spectroscopy of zinc oxide layers grown on p-Si substrates by sol−gel and spin coating method / P. Popielarski, W. Bała, K. Paprocki // Оксидні матеріали електронної техніки – отримання, властивості, застосування (ОМЕЕ – 2012) : збірник матеріалів міжнародної наукової конференції, 3-7 вересня 2012 року, Львів, Україна / Національний університет “Львівська політехніка”. – Львів : Видавництво Львівської політехніки, 2012. – С. 47–48. – Bibliography: 8 titles. | uk_UA |
dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/15144 | |
dc.language.iso | en | uk_UA |
dc.publisher | Видавництво Львівської політехніки | uk_UA |
dc.subject | Zinc Oxide | uk_UA |
dc.subject | thin films | uk_UA |
dc.subject | Sol-gel method | uk_UA |
dc.subject | Admittance spectroscopy | uk_UA |
dc.subject | electrical properties | uk_UA |
dc.title | Admittance and photoadmittance spectroscopy of zinc oxide layers grown on p-Si substrates by sol−gel and spin coating method | uk_UA |
dc.type | Article | uk_UA |