Browsing by Author "Voznyak, T."
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Item Growth and luminescent properties of Y3Al5O12:Mn single crystalline films(Видавництво національного університету “Львівська політехніка”, 2009) Zorenko, Yu.; Gorbenko, V.; Voznyak, T.; Wisniewski, K.; Kuklinski, B.; Grinberg, M.Item LPE growth and luminescent properties of Ce doped A2SiO5:Ce (A = Lu, Gd, Y) single crystalline films(Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.Item LPE growth and luminescent properties of ce doped A2SiO5:Ce (A = Lu, Gd, Y) Single crystalline films(Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.Item Luminescence of Cu+ and Cu2+ ions in CsBr crystals(Видавництво національного університету „Львівська політехніка”, 2009) Zorenko, Yu.; Voznyak, T.; Turchak, R.Item Optical and electrical properties of ZnO thin films grown by sol-gel method(Видавництво Львівської політехніки, 2012) Bała, W.; Zorenko, Yu.; Savchyn, V; Voznyak, T.; Paprocki, K.; Popielarski, P.; Szybowicz, M.The ZnO thin films have been produced on p-type Si by the dip-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V, Q-DLTS measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.