(Видавництво Львівської політехніки, 2012) Ivashchenko, І. А.; Halyan, V. V.; Danylyuk, І. V.; Pankevuch, V. Z.; Davydyuk, G. Ye.; Olekseyuk, І. D.
The phase diagram of the Ga2Se3–In2Se3 system
as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a
vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R = 500 M ) and (Ga0.594In0.396Er0.01)2Se3 (R = 210 M ) was measured.
