Оксидні матеріали електронної техніки – отримання, властивості, застосування.

Search Results

Now showing 1 - 2 of 2

LPE growth and luminescent properties of ce doped A2SiO5:Ce (A = Lu, Gd, Y) Single crystalline films
(Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.
The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.
LPE growth and luminescent properties of Ce doped A2SiO5:Ce (A = Lu, Gd, Y) single crystalline films
(Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.
The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.