(Видавництво Національного університету "Львівська політехніка", 2002) Holyaka, Roman; Hladun, Michael; Humenyuk, Iryna; Sopilnyk, Lyubomyr; Lviv Polytechnic National University; National Institute of Applied Science in Toulouse, France
We present the methods for synthesis of magnetotransistor mathematical model based on dual-collector structure of lateral transistor using PSPICE software. The complexity of magnetotransistor model is caused by special effects which concern these transistors. We considered main special effects such as parasitic carrier extraction from epitaxial layer into substrate and dependence of magnetotransistor parameters on base accelerating field.
