The synthesis of mathematical model for magnetotransistor using PSPICE software

Abstract

We present the methods for synthesis of magnetotransistor mathematical model based on dual-collector structure of lateral transistor using PSPICE software. The complexity of magnetotransistor model is caused by special effects which concern these transistors. We considered main special effects such as parasitic carrier extraction from epitaxial layer into substrate and dependence of magnetotransistor parameters on base accelerating field.