Effect of the impurities in substrates ZnSe on properties isovalent substituted layers ZnO

Simple item page
dc.contributor.authorMakhiy, V. P
dc.contributor.authorSlyotov, M. M.
dc.contributor.authorKhusnutdinov, S. V.
dc.date.accessioned2010-06-21T07:29:00Z
dc.date.available2010-06-21T07:29:00Z
dc.date.issued2009
dc.identifier.citationMakhiy V. P. Effect of the impurities in substrates ZnSe on properties isovalent substituted layers ZnO / V. P. Makhiy, M. M. Slyotov, S. V. Khusnutdinov // Oxide materials for electronic engineering – fabrication, properties and application OMEE-2009 : international scientific workshop, June 22–26, 2009, Lviv, Ukraine : book of abstracts / Lviv Polytechnic National University. – Lviv, 2009. – P. 149.uk_UA
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/5560
dc.language.isoenuk_UA
dc.publisherВидавництво національного університету „Львівська політехніка”uk_UA
dc.subjectisovalent substitution (IVS)uk_UA
dc.subjectlaser electroopticaluk_UA
dc.titleEffect of the impurities in substrates ZnSe on properties isovalent substituted layers ZnOuk_UA
dc.typearticleuk_UA

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
109.pdf
Size:
48.32 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Оксидні матеріали електронної техніки – отримання, властивості, застосування. – 2009 р.