Deep Levels in β-Ga2O3 Single Crystals Doped with Mg2+ Ions
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Deep Levels in β-Ga2O3 Single Crystals Doped with Mg2+ Ions / A. Luchechko, V. Vasyltsiv, L. Kostyk, O. Tsvetkova // Oxide Materials
for Electronic Engineering –
fabrication, properties
and applications : book
of abstracts international conference, May 29–June 2, 2017
Lviv, Ukraine. — Lviv, 2017. — P. 56. — (2 active media fundamentals: crystal structure and defects).