Development of PNH4+ sensitive isfet
| dc.contributor.author | Temple-Boyer, P. | |
| dc.contributor.author | Hotra, Z. | |
| dc.contributor.author | Holyaka, R. | |
| dc.contributor.author | Humenyuk, I. | |
| dc.date.accessioned | 2016-01-14T10:08:59Z | |
| dc.date.available | 2016-01-14T10:08:59Z | |
| dc.date.issued | 2004 | |
| dc.description.abstract | Front-side connected, N-channel, normally-off, Si02/Si3N4 Ion Sensitive Field Effect Transistor (ISFET) microsensors have been fabricated and adapted to the ammonium ion detection thanks to polysiloxane ionosensitive layer. This photosensitive polymer has been deposited on dielectric gate and patterned either by dip coating, either by spin coating and photolithography techniques. The sensitivity characteristics of both structures have been studied. The sensors have been shows a good quasi-nernstian sensitivities to NH/ cation in the different solution of ammonium nitrate (NH4N03) IIO'^.IO'1] M. | uk_UA |
| dc.identifier.citation | Development of PNH4+ sensitive isfet / P. Temple-Boyer, Z. Hotra, R. Holyaka, I. Humenyuk // Вісник Національного університету «Львівська політехніка». – 2004. – № 510 : Елементи теорії та прилади твердотілої електроніки. – С. 17–20. – Bibliography: 5 titles. | uk_UA |
| dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/31011 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Видавництво Національного університету "Львівська політехніка" | uk_UA |
| dc.title | Development of PNH4+ sensitive isfet | uk_UA |
| dc.type | Article | uk_UA |
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