Crystal growth of the (Ga1-xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals
| dc.contributor.author | Ivashchenko, І. А. | |
| dc.contributor.author | Halyan, V. V. | |
| dc.contributor.author | Danylyuk, І. V. | |
| dc.contributor.author | Pankevuch, V. Z. | |
| dc.contributor.author | Davydyuk, G. Ye. | |
| dc.contributor.author | Olekseyuk, І. D. | |
| dc.date.accessioned | 2012-10-10T13:26:52Z | |
| dc.date.available | 2012-10-10T13:26:52Z | |
| dc.date.issued | 2012 | |
| dc.description.abstract | The phase diagram of the Ga2Se3–In2Se3 system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R = 500 M ) and (Ga0.594In0.396Er0.01)2Se3 (R = 210 M ) was measured. | uk_UA |
| dc.identifier.citation | Crystal growth of the (Ga1-xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals / І. А. Ivashchenko, V. V. Halyan, І. V. Danylyuk, V. Z. Pankevuch, G. Ye. Davydyuk, І. D. Olekseyuk // Оксидні матеріали електронної техніки – отримання, властивості, застосування (ОМЕЕ – 2012) : збірник матеріалів міжнародної наукової конференції, 3-7 вересня 2012 року, Львів, Україна / Національний університет “Львівська політехніка”. – Львів : Видавництво Львівської політехніки, 2012. – С. 33–34. – Bibliography: 2 titles. | uk_UA |
| dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/15153 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Видавництво Львівської політехніки | uk_UA |
| dc.subject | phase diagram | uk_UA |
| dc.subject | single crystal | uk_UA |
| dc.subject | band gap | uk_UA |
| dc.subject | absorption spectra | uk_UA |
| dc.subject | semiconductor | uk_UA |
| dc.subject | resistance | uk_UA |
| dc.title | Crystal growth of the (Ga1-xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals | uk_UA |
| dc.type | Article | uk_UA |