The current phenomenon in the indium-tin oxidealignment layer-liquid crystal structure

dc.contributor.authorMykytyuk, Z.
dc.contributor.authorFechan, A.
dc.contributor.authorSushynsky, O.
dc.contributor.authorYasynovska, O.
dc.contributor.authorKotsun, V.
dc.date.accessioned2010-06-18T07:17:24Z
dc.date.available2010-06-18T07:17:24Z
dc.date.issued2009
dc.identifier.citationMykytyuk Z. The current phenomenon in the indium-tin oxidealignment layer-liquid crystal structure / Z. Mykytyuk, A. Fechan, O. Sushynsky, O. Yasynovska, V. Kotsun // Oxide materials for electronic engineering – fabrication, properties and application OMEE-2009 : international scientific workshop, June 22–26, 2009, Lviv, Ukraine : book of abstracts / Lviv Polytechnic National University. – Lviv, 2009. – P. 194.uk_UA
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/5509
dc.language.isoenuk_UA
dc.publisherВидавництво національного університету „Львівська політехніка”uk_UA
dc.subjectindium-tin oxide (ITO)uk_UA
dc.subjectMBBAuk_UA
dc.titleThe current phenomenon in the indium-tin oxidealignment layer-liquid crystal structureuk_UA
dc.typearticleuk_UA

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