Можливість виявлення потенційно ненадійних елементів електроніки

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dc.citation.epage88
dc.citation.issue3
dc.citation.journalTitleВимірювальна техніка та метрологія : міжвідомчий науково-технічний збірник
dc.citation.spage83
dc.citation.volume79
dc.contributor.affiliationНаціональний університет «Львівська політехніка»
dc.contributor.affiliationLviv Polytechnic National University
dc.contributor.authorКолодій, З. О.
dc.contributor.authorКрук, О. Г.
dc.contributor.authorKolodiy, Z.
dc.contributor.authorKruk, O.
dc.coverage.placenameЛьвів
dc.date.accessioned2019-11-12T09:40:19Z
dc.date.available2019-11-12T09:40:19Z
dc.date.created2018-02-26
dc.date.issued2018-02-26
dc.description.abstractНаведено результати комп’ютерного моделювання власного шуму елемента електроніки (ЕЕ) для різних моделей його внутрішньої структури. Наведено результати експериментальних досліджень власного шуму ЕЕ в діапазоні низьких частот, які підтверджують результати комп’ютерного моделювання, а саме: вищий рівень шуму в діапазоні низьких частот мають ті ЕЕ, у внутрішній структурі яких більше дефектів. Наведено аналітичний вираз енергетичного спектра власного шуму ЕЕ, у якому параметр τ залежить від особливостей внутрішньої структури ЕЕ. Показано, що виявлення потенційно ненадійних елементів можна здійснювати або за рівнем їхнього власного шуму в діапазоні низьких частот, або за значенням параметра τ.
dc.description.abstractHidden defects can turn into obvious defects and characteristics of electronic elements become inappropriate. Therefore, the techniques of non-destructive diagnostics of inner structure state are of great importance. One of these techniques is the diagnostics of electronics by their own noise, which advantageously differs by low time consuming and absence of the risk of damage of the element under investigation. Noise measurements are capable to detect the defects in a material with a sensitivity that cannot be reached by other methods. The results of computer simulation of noise for different models of its internal structure are presented. The simulation was carried out in order to reveal the influence of the internal structure elements of the system under study on the level of its noise at low frequency range. It is shown that systems with fewer structural elements have lower noise level at low frequencies concerning the systems that comprise more elements. The results of the simulation also demonstrate that systems with the same number of structure elements are inherent in different noise levels in low frequency range: systems with an ordered arrangement of the elements are the less noisy then more disordered omes. The results of noise studies of metal films, composite resistors and semiconductor diodes at low-frequency range are presented. It is noted that noise of composite resistors at low frequencies is greater than noise of the metal film resistors for the same scattering power (0,125 watts). The noise of the diodes at low frequencies is much larger than the resistors noise. The increase in noise for diodes can be explained within the hypothesis of the substantial influence of the internal structure of the test sample. Analytical expression of the energy spectrum of the own noise of electronic element, which parameter τ depends on the features of the internal structure, is presented. It has been shown that the detection of potentially unreliable elements can be carried out either by the level of their own noise at the low-frequency band or by the value of the parameter τ.
dc.format.extent83-88
dc.format.pages6
dc.identifier.citationКолодій З. О. Можливість виявлення потенційно ненадійних елементів електроніки / З. О. Колодій, О. Г. Крук // Вимірювальна техніка та метрологія : міжвідомчий науково-технічний збірник. — Львів : Видавництво Львівської політехніки, 2018. — Том 79. — № 3. — С. 83–88.
dc.identifier.citationenKolodiy Z. Ability of identifying the unreliable elements of electronics / Z. Kolodiy, O. Kruk // Measuring equipment and metrology : scientific journal. — Vydavnytstvo Lvivskoi politekhniky, 2018. — Vol 79. — No 3. — P. 83–88.
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/45522
dc.language.isouk
dc.publisherВидавництво Львівської політехніки
dc.relation.ispartofВимірювальна техніка та метрологія : міжвідомчий науково-технічний збірник, 3 (79), 2018
dc.relation.ispartofMeasuring equipment and metrology : scientific journal, 3 (79), 2018
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dc.relation.references18. G. Leroy, L. Yang, J. Gest, L. Vandamme, “Research on the properties of ZnO films by 1/f noise measurement”, in Thesis 22 nd Int. Conf. on Noise Fluctuations. Corum de Montpellier, France, p. 48, June 24–28, 2013.
dc.relation.references19. Z. Kolodiy, “Flicker-noise of electronic equipment: Sources, ways of reduction and application”, Radioelectronics and Communications Systems, vol. 53, p. 421–417, 2010.
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dc.relation.references21. Z. Kolodiy, “Detection of changes in the structure of a system according to changes of its flicker noise”, Ukr. J. Phys., vol. 53, no. 7, p. 718–722, 2008.
dc.relation.referencesen1. N. Mielke, R Frickey, I. Kalastirsky, M. Quan, D. Ustinov, V. Vasudevan, “Reliability of Solid-State Drives Based on NAND Flash Memory”, Proc. of the IEEE, vol. 105, iss. 9, p. 1725–1750, 2017.
dc.relation.referencesen2. V. Kharchenko, “Problems of reliability of electronic components”, Modern Electronic Materials, vol. 1, iss. 3, p. 88–92, 2015.
dc.relation.referencesen3. M. Farhadi, M. Abapour, B. Mohammadi- Ivatloo,”Reliability analysis of component-level redundant topologies for solid-state fault current limiter”, Int. Journ. Electronics, vol. 105, iss. 4, p. 541–558, 2018.
dc.relation.referencesen4. C. Claeys, E. Simoen, S. Put, G. Giusi , F. Crupi, “Impact strain engineering on gate stack quality and reliability”, Solid-State Electronics, vol. 52, p. 1115–1126, 2008.
dc.relation.referencesen5. H. Pon, J. Dayacap, R. Frickey, “Reliability issues studied in Solid-State Drives”, Memory Workshop IEEE 6th International, May 18–21, 2014.
dc.relation.referencesen6. R. Amy, G. Aglietti, G. Richardson, “Reliability analysis of electronic equipment subjected to shock and vibration – A review”, Shock and Vibration, vol. 16, p. 45–59, 2009.
dc.relation.referencesen7. Nondestructive Testing in Electronics Manufacturing. Online.. Available: http://poeth.com/.
dc.relation.referencesen8. A. Konczakowska, B. Wilamowski. Noise in Semiconductor Devices. 2010 Online.. Available: www.eng.auburn. edu/~wilambm/pap/.../K10147_C011.pdf
dc.relation.referencesen9. R. Harsh, K. Narayan, “Noise spectroscopy of polymer transistors”, Journ. Appl. Phys., vol. 118, p. 205–502, 2015.
dc.relation.referencesen10. A. Szewczyk, L. Łentka, J. Smulko, P. Babuchowska, F. Béguin, “Measurements of flicker noise in supercapacitor cells”, in Proc. Int. Conf. on Noise and Fluctuations, June 20–23, 2017. DOI: 10.1109/ICNF.2017.7985985.
dc.relation.referencesen11. A. Balandin, K. L. Wang, S. Cai, R. Li, C. R. Viswanathan, E.N. Wang, M. Wojtowicz, “Investigation of Flicker oise and Deep-Levels in GaN/AlGaN Transistors”, J. Electron. Materials, vol. 29, p. 297, 2000.
dc.relation.referencesen12. M. Kayyalha, Yo. Chen, “Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates”, Appl. Phys. Let., vol. 107, p. 113101, 2015.
dc.relation.referencesen13. E. Simoen, M. Aoulaiche, S. dos Santos et al, “Low- Frequency Noise Studies on Fully Depleted UTBOX Silicon-on- Insulator nMOSFETs: Challenges and Opportunities”, ECS J. Solid State Sci. Technol., vol. 2(11), p. 205–210, 2013.
dc.relation.referencesen14. M. Mihaila, “On the 1/f Noise and Energy Partition in Solid”, Rom. Journ. Inf. Sc. and Techn., vol. 19, no. 1–2, p. 175–187, 2016.
dc.relation.referencesen15. H. Kang, V. Subramanian, “Measurement and analysis of 1/f noise under switched bias in organic thin film transistors”, Appl. Phys. Lett., vol. 194, iss. 2, 2014.
dc.relation.referencesen16. Z. Kolodiy, A. Kolodiy, “Fluctuations of flicker type in technical and natural systems”, in Thesis 22nd Int. Conf. on Noise Fluctuations, Corum de Montpellier, France, p.131, June 24-28, 2013, DOI:10.1109/ICNF.2013.6578927.
dc.relation.referencesen17. G. Leroy, L. Yang, J. Gest, L. Vandamme, “Research on the properties of ZnO films by 1/f noise measurement”, in Thesis 22nd Int. Conf. on Noise Fluctuations. Corum de Montpellier, France, p. 48, June 24-28, 2013.
dc.relation.referencesen18. Z. Kolodiy, “Flicker-noise of electronic equipment: Sources, ways of reduction and application”, Radioelectronics and Communications Systems, vol. 53, p. 421–417, 2010.
dc.relation.referencesen19. Z. Kolodiy, B.. Mandziy, “Calculation of Flicker Noise Power”, Automatic Control and Computer Sciences, vol.50, no. 1, p. 15–19, 2016.
dc.relation.referencesen20. Z. Kolodiy, “Detection of changes in the structure of a system according to changes of its flicker noise”, Ukr. J. Phys., vol. 53, no. 7, p. 718–722, 2008
dc.relation.urihttp://poeth.com/
dc.rights.holder© Національний університет “Львівська політехніка”, 2018
dc.subjectфлікер-шум
dc.subjectвнутрішня структура
dc.subjectенергетичний спектр
dc.subjectчас релаксації
dc.subjectFlicker Noise
dc.subjectInner Structure
dc.subjectEnergy Spectrum
dc.subjectRelaxation Time
dc.titleМожливість виявлення потенційно ненадійних елементів електроніки
dc.title.alternativeAbility of identifying the unreliable elements of electronics
dc.typeArticle

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Вимірювальна техніка та метрологія. – 2018. – Випуск 79, №3