Electrical Properties of the MIS Structures Based on MBE HgCdTe with SiO2/Si3N4 and Al2O3 Insulating Layers
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Electrical Properties of the MIS Structures Based on MBE HgCdTe with SiO2/Si3N4 and Al2O3 Insulating Layers / I. Izhnin, A. Voitsekhovskii, S. Nesmelov, S. Dzyadukh, G. Sidorov, V. Varavin, V. Vasil`ev, S. Dvoretsky, N. Mikhailov, M. Yakushev // Oxide Materials
for Electronic Engineering –
fabrication, properties
and applications : book
of abstracts international conference, May 29–June 2, 2017
Lviv, Ukraine. — Lviv, 2017. — P. 37. — (1 technology of active media for electronic engineering).