Синтез напівпровідникових тонких плівок цинк сульфіду і цинк селеніду. Огляд

dc.citation.epage9
dc.citation.issue2
dc.citation.spage1
dc.contributor.affiliationНаціональний університет “Львівська політехніка”
dc.contributor.authorСозанський, М. А.
dc.contributor.authorШаповал, П. Й.
dc.contributor.authorЯтчишин, Й. Й.
dc.contributor.authorСтаднік, В. Є.
dc.contributor.authorЛарук, М. М.
dc.contributor.authorSozanskyi, M. A.
dc.contributor.authorShapoval, P. Yo.
dc.contributor.authorYatchyshyn, Yo. Yo.
dc.contributor.authorStadnik, V. E.
dc.contributor.authorLaruk, M. M.
dc.coverage.placenameLviv
dc.coverage.placenameLviv
dc.date.accessioned2020-02-28T11:07:37Z
dc.date.available2020-02-28T11:07:37Z
dc.date.created2018-02-26
dc.date.issued2018-02-26
dc.description.abstractПроведено огляд основних фізичних і хімічних методів синтезу тонких плівок цинк сульфіду (ZnS) та цинк селеніду (ZnSe). Розглянуто кристалографічні характеристики цих сполук. Проаналізовано особливості виконання методів, їхні переваги та недоліки. Показано основні параметри отримання (температура, час осадження) плівок ZnS та ZnSe, їхні структурні, морфологічні властивості та товщину залежно від вибраного способу їхнього синтезу. Вивчено перспективи практичного використання хімічних методів. Аргументовано вибрано оптимальний метод хімічного осадження для одержання тонких плівок ZnS та ZnSe, які можна використати для заміни кадмійвмісних покриттів у буферних шарах фоточутливих елементів.
dc.description.abstractA review of the main physical and chemical methods of synthesis of zinc sulfide (ZnS) and zinc selenide (ZnSe) thin films was made. The crystallographic characteristics of these compounds are considered. The features of carrying out of methods, their advantages and disadvantages are analysed. The main parameters (temperature, deposition duration) of obtaining of ZnS and ZnSe thin films, their structural, morphological and thickness depending on the chosen method of their synthesis are shown. The possibilities of chemical methods practical use are studied. A well-reasoned choice of the optimal method of chemical deposition for obtaining of ZnS and ZnSe thin films, which can be used as a replacement of cadmiumcontaining in buffer layers of photosensitive elements, was made.
dc.format.extent1-9
dc.format.pages9
dc.identifier.citationСинтез напівпровідникових тонких плівок цинк сульфіду і цинк селеніду. Огляд / М. А. Созанський, П. Й. Шаповал, Й. Й. Ятчишин, В. Є. Стаднік, М. М. Ларук // Chemistry, Technology and Application of Substances. — Lviv : Lviv Politechnic Publishing House, 2018. — Том 1. — № 2. — С. 1–9.
dc.identifier.citationenSynthesis of zinc sulfide and zinc selenide semiconductor thin films. Review / M. A. Sozanskyi, P. Yo. Shapoval, Yo. Yo. Yatchyshyn, V. E. Stadnik, M. M. Laruk // Chemistry, Technology and Application of Substances. — Lviv : Lviv Politechnic Publishing House, 2018. — Vol 1. — No 2. — P. 1–9.
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/46331
dc.language.isouk
dc.publisherLviv Politechnic Publishing House
dc.relation.ispartofChemistry, Technology and Application of Substances, 2 (1), 2018
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dc.relation.referencesen3. Block S. Round-Robin Study of the High Pressure Phase Transition in ZnS, S Block, Acta Crystallographica, Section A, 1978, Vol. 34, S. 316a.
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dc.relation.referencesen5. Bither T. A. Transition Metal Pyrite Dichalcogenides. High-Pressure Synthesis and Correlation of Properties, T. A. Bither, R. J. Bouchard, W.H. Cloud, P.C. Donohue, W.J. Siemons, Inorganic Chemistry, 1968, Vol. 7, P. 2208–2220.
dc.relation.referencesen6. Parasyuk O.V. Phase diagram of the Cu2GeSe3–ZnSe system and crystal structure of the Cu2ZnGeSe4 compound, O.V. Parasyuk, L.D. Gulay, Y.E. Romanyuk, L.V. Piskach, Journal of Alloys and Compounds, 2001, Vol. 329. P. 202–207.
dc.relation.referencesen7. Kulakov M.P. Phase Diagram and Crystallization In The System CdSe-ZnSe, M.P. Kulakov, I.V. Balyakina, N.N. Kolesnikov, Inorganic Materials, 1989, Vol. 25, P. 1386–1389.
dc.relation.referencesen8. Kurbatov D. Growth kinetics and stoichiometry of ZnS films obtained by closespaced vacuum sublimation technique, D. Kurbatov, A. Opanasyuk, S. Duvanov, A. Balogh, H. Khlyap, Solid State Sciences, 2011, Vol. 13, P. 1068–1071.
dc.relation.referencesen9. Arslana M. Structural and optical properties of copper enriched ZnSe thin films prepared by closed space sublimation technique, M. Arslana, A. Maqsood, A. Mahmoo, A. Iqba, Materials Science in Semiconductor Processing, 2013, Vol. 16, P. 1797–1803.
dc.relation.referencesen10. Ivashchenko M.M. Influence of deposition conditions on morphological, structural, optical and electro-physical properties of ZnSe films obtained by close-spaced vacuum sublimation, M.M. Ivashchenko, I.P. Buryk, A.S. Opanasyuk, D. Nam, H. Cheong, Ja.G. Vazievb, V.V. Bibyk, Materials Science in Semiconductor Processing, 2015, Vol. 36, P. 13–19.
dc.relation.referencesen11. Emam-Ismail M. Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films, M. Emam-Ismail, M. El-Hagary, E. Shaaban, A. Al-Hedeib., Journal of Alloys and Compounds, 2012, Vol. 532, P. 16–24.
dc.relation.referencesen12. Jian S. Berkovich nanoindentation-induced dislocation energetics and pop-ineffects in ZnSe thin films, S. Jian, Y. Lin, Journal of Alloys and Compounds, 2014, Vol. 590, P. 153–156.
dc.relation.referencesen13. Lee L. Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots, L. Lee, Y. Dai, C. Yang, W. Fan, W. Chou, Journal of Alloys and Compounds, 2015, Vol. 632, P. 392–396.
dc.relation.referencesen14. Zhang W. Phase controlled synthesis and optical properties of ZnS thin films by pulsed laser deposition, W. Zhang, X. Zeng, J. Lu, H. Chen., Materials Research Bulletin, 2013, Vol.48, P. 3843–3846.
dc.relation.referencesen15. Chen L. Growth of ZnSe nano-needles by pulsed laser deposition and their application in polymer/inorganic hybrid solar cells, L. Chen, J.S. Lai, X.N. Fu, J. Sun, Z. Ying, J. Wu, H. Lu, N. Xu., Thin Solid Films, 2013, Vol. 529, P. 76–79.
dc.relation.referencesen16. Díaz-Reyes J. Structural and optical characterization of wurtzite type ZnS, J. Díaz-Reyes, R. Castillo-Ojeda, R. Sanchez- Espíndola, M. Galvan-Arellano, O. Zaca-Moran, Current Applied Physics, 2015, Vol. 15, P. 103–109.
dc.relation.referencesen17. Xu X. Structural and optical studies of ZnS nanocrystalfilms prepared by sulfosalicylic acid (P.7H6O6S)-assisted galvanostatic deposition with subsequent annealing, X. Xu, F. Wang, J. Liu, Z. Lia, J. Ji, J. Chen, Thin Solid Films, 2012, Vol. 520, P. 6864–6868.
dc.relation.referencesen18. Arbi N. Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films, N. Arbi, I. Ben Assaker, M. Gannouni, A. Kriaa, R. Chtourou, Materials Science in Semiconductor Processing, 2015, Vol. 40, P. 873–878.
dc.relation.referencesen19. Kumar S. Development of nanocrystalline ZnSe thin film through electrodeposition from a non-aqueous solution, S. Kumar, M. Nuthalapatia, J. Maity, Scripta Materialia, 2012, Vol.67, P. 396–399.
dc.relation.referencesen20. Bu I. Sol–gel synthesis of ZnS(O,OH) thin films: Influence of precursor and process temperature on its optoelectronic properties, I. Bu, Journal of Luminescence, 2013, Vol. 134, P. 423–428.
dc.relation.referencesen21. Ehsana M.A. Surface morphological and photoelectrochemical studies of ZnS thin films developed from single source precursors by aerosol assisted chemical vapour deposition, M.A. Ehsana, T.A. Nirmal Peiris, K.G. Upul Wijayantha, H. Khaledi, H. N. Ming, M. Misran, Z. Arifin, M. Mazhar, Thin Solid Films, 2013, Vol. 540, P. 1–9.
dc.relation.referencesen22. Ateş A. ZnS thin film and Zn/ZnS/n-Si/Au-Sb sandwich structure grown with SILAR method and defining the characteristic parameters, A. Ateş, B. Güzeldir, M. Sağlam, Materials Science in Semiconductor Processing, 2011, Vol. 14, Iss. 1, P. 28–36.
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dc.relation.referencesen24. Liu W. Effect of deposition variables on properties of CBD ZnS thin films prepared in chemical bath of ZnSO4/SC(NH2)2/Na3C3H5O7/NH4OH, W. Liu, C. Yang, S. Hsieh, Applied Surface Science, 2013, Vol 264, P.213–218.
dc.relation.referencesen25. Chen L. Comparative study of ZnSe thin films deposited from modified chemical bath solutions with ammonia-containing and ammoniafree precursors, L. Chen, D. Zhang, G. Zhai, J. Zhang, Materials Chemistry and Physics, 2010, Vol. 120, Iss. 2–3, P. 456–460.
dc.relation.referencesen26. Agawane G.L. Preparation and characterization of chemical bath deposited nanocrystalline ZnSe thinfilms using Na3-citrate and hydrazine hydrate: A comparative study, G.L. Agawane, S. W. Shin, M.P. Suryawanshi, K.V. Gurav, A.V. Moholkar, J. Y. Lee, P.S. Patil, J. H. Yun, J. H. Kim, Materials Letters, 2013, Vol. 106, P. 186–189.
dc.relation.referencesen27. Kassim A. Deposition and characterization of ZnS thin films using chemical bath deposition method in the presence of sodium tartrate as complexing agent, A. Kassim, T. Teea, H. Mina, S. Nagalingamb, Pakistan Journal of Scientific and Industrial Research Series A: Physical Sciences, 2011, Vol 54(1), P. 1–5.
dc.relation.referencesen28. Pawar S.M. Recent status of chemical bath deposited metal chalcogenide and metaloxide thin films, S.M. Pawar, B.S. Pawar, J.H. Kim, Oh-Shim Joo, C.D. Lokhande, Curr. Appl. Phys, 2011, Vol. 11, P. 117–161.
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dc.rights.holder© Національний університет „Львівська політехніка“, 2018
dc.rights.holder© Созанський М. А., Шаповал П. Й., Ятчишин Й. Й., Стаднік В. Є., Ларук М. М., 2018
dc.subjectцинк сульфід
dc.subjectцинк селенід
dc.subjectнапівпровідникові плівки
dc.subjectхімічне осадження
dc.subjectморфологія поверхні
dc.subjectzinc sulfide
dc.subjectzinc selenide
dc.subjectsemiconductor films
dc.subjectchemical deposition
dc.subjectsurface morphology
dc.titleСинтез напівпровідникових тонких плівок цинк сульфіду і цинк селеніду. Огляд
dc.title.alternativeSynthesis of zinc sulfide and zinc selenide semiconductor thin films. Review
dc.typeArticle

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