Оксидні матеріали електронної техніки – отримання, властивості, застосування (OMEE-2012). – 2012 р.

Permanent URI for this collectionhttps://ena.lpnu.ua/handle/ntb/14991

У збірнику подані розширені тези доповідей Міжнародної наукової конференції "Оксидні матеріали електронної техніки - отримання, властивості, застосування" (OMEE-2012). Конференція присвячена актуальним проблемам технології отримання та дослідження структурних , оптичних, магнітних та електрофізичних властивостей оксидних матеріалів, а також можливості їх практичного застосування у пристроях електронної техніки та розроблення нових функціональних пристроїв на їх основі. Для наковців та аспірантів, які працюють в галузі фізики оксидних матеріалів.

Оксидні матеріали електронної техніки – отримання, властивості, застосування (ОМЕЕ – 2012) : збірник матеріалів міжнародної наукової конференції, 3-7 вересня 2012 року, Львів, Україна / Міністерство освіти, науки, молоді та спорту України, Національний університет “Львівська політехніка”. – Львів : Видавництво Львівської політехніки, 2012. – 305 c.

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    The luminescence of PbWO4:Tb and CdWO4:Tb,Li crystals at synchrotron excitation
    (Видавництво Львівської політехніки, 2012) Novosad, S.; Kostyk, L.; Novosad, I.; Luchechko, A.
    The luminescence of PbWO4:Tb3+ and CdWO4:Tb,Li crystals is effectively excited by the synchrotron radiation in the long-wavelength fundamental absorption edge region and in the region of photon multiplication. In the case of PbWO4:Tb3+ excitation of using photons with energy 14.1 eV the weak recombination luminescence of terbium impurity is observed against the background of matrix emission at 300 K. The luminescence intensity of PbWO4:Tb3+ increases about an order of magnitude, when the temperature is decreased to 8 K, at the same time the luminescence characteristic for PbWO4 crystals is observed. It was shown, that the spectrum of lowtemperature matrix luminescence of PbWO4:Tb is approximated by elementary bands with maxima near 2.93, 2.61, 2.34 and 1.9 eV. The luminescence spectra of CdWO4:Tb,Li at 10 K may be presented by the superposition of elementary matrix bands 2.07, 2.47 and 2.73 eV and narrow bands (lines) associated with f-f-transitions in Tb3+ ions. The nature of emission bands is discussed.
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    LPE growth and luminescent properties of ce doped A2SiO5:Ce (A = Lu, Gd, Y) Single crystalline films
    (Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.
    The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.
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    Luminescent properties of MeMoO4 (Me=Ca, Sr, Zn, Li2) single crystals
    (Видавництво Львівської політехніки, 2012) Savon, A.; Spassky, D.
    The luminescent properties of MeMoO4 (Me=Ca, Sr, Zn, Li2) single crystals were studied. All the results are discussed in view of applying these scintillating materials in cryogenic environment.
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    The luminescence of PbWO4:Tb and CdWO4:Tb,Li crystals at synchrotron excitation
    (Видавництво Львівської політехніки, 2012) Novosad, S.; Kostyk, L.; Novosad, I.; Luchechko, A.
    The luminescence of PbWO4:Tb3+ and CdWO4:Tb,Li crystals is effectively excited by the synchrotron radiation in the long-wavelength fundamental absorption edge region and in the region of photon multiplication. In the case of PbWO4:Tb3+ excitation of using photons with energy 14.1 eV the weak recombination luminescence of terbium impurity is observed against the background of matrix emission at 300 K. The luminescence intensity of PbWO4:Tb3+ increases about an order of magnitude, when the temperature is decreased to 8 K, at the same time the luminescence characteristic for PbWO4 crystals is observed. It was shown, that the spectrum of lowtemperature matrix luminescence of PbWO4:Tb is approximated by elementary bands with maxima near 2.93, 2.61, 2.34 and 1.9 eV. The luminescence spectra of CdWO4:Tb,Li at 10 K may be presented by the superposition of elementary matrix bands 2.07, 2.47 and 2.73 eV and narrow bands (lines) associated with f-f-transitions in Tb3+ ions. The nature of emission bands is discussed.
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    LPE growth and luminescent properties of Ce doped A2SiO5:Ce (A = Lu, Gd, Y) single crystalline films
    (Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.
    The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.
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    Luminescent properties of MeMoO4 (Me=Ca, Sr, Zn, Li2) single crystals
    (Видавництво Львівської політехніки, 2012) Savon, A.; Spassky, D.
    The luminescent properties of MeMoO4 (Me=Ca, Sr, Zn, Li2) single crystals were studied. All the results are discussed in view of applying these scintillating materials in cryogenic environment.
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    Luminescent properties of MgWO4 crystals
    (Видавництво Львівської політехніки, 2012) Krutyak, N.; Mikhailin, V. V.; Spassky, D.; Tupitsyna, I. A.; Dubovik, A. M.
    Luminescent properties of magnesium tungstate were investigated. Two samples of MgWO4 single crystals grown by different methods were studied. Only intrinsic luminescence attributed to exciton emission was detected for the both samples and. It was shown that the temperature dependence of the low-energy edge in the excitation spectra obeys Urbach rule. Steepness coefficient that was deduced from this dependence indicates self-trapping of excitons in MgWO4. The absence of cation d states in the valence band is a distinctive feature of MgWO4 that is shown to be manifested in the luminescence excitation spectra.
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    Recombination luminescence in LaPO4-Eu and LaPO4-Pr nanoparticles
    (Видавництво Львівської політехніки, 2012) Vistovskyy, V.; Malyy, T.; Voloshinovskii, A.; Getkin, A.; Shapoval, O.; Zaichenko, A.; Mitina, N.
    The luminescence properties of LaPO4-Eu and LaPO4-Pr nanoparticles with various sizes (8–50 nm) are studied upon the excitation by VUV and X-ray quanta. The dependences of luminescence intensity on nanoparticle size for nanoparticles LaPO4-Pr and LaPO4-Eu possessing, respectively, by the electron and hole recombination luminescence at the excitation by quanta of various energies are discussed.
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    Luminescence of Bi3+ Ions in yttrium and yttrium-aluminum oxides
    (Видавництво Львівської політехніки, 2012) Zhydachevskii, Ya.; Suchocki, A.; Lipińska, L.; Baran, M.
    The work describes experimental results on Bi3+ luminescence in yttrium oxide (YO) and yttrium-aluminum oxides namely Y3Al5O12 (YAG), YAlO3 (YAP) and Y4Al2O9 (YAM) in the form of nanopowders synthesized by sol-gel method.
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    Comparable luminescence investigation of the La1-xEuxVO4 solid solutions synthesized by two different methods
    (Видавництво Львівської політехніки, 2012) Chukova, O. V.; Nedilko, S. G.; Scherbatskii, V.; Nedilko, S. A.; Voytenko, T.
    Luminescence properties of the series of the La1-xEuxVO4 solid solutions were investigated. The samples were synthesized by the solid state and co-precipitation methods. Luminescence spectra of the investigated samples consist of weak wide non-structural band of the matrix emission and narrow spectral lines caused by inner f-f electron transitions in the impurity Eu3+ ions. Dependences of the structure, peak positions and intensity of luminescence on the composition, samples temperature and excitation wavelengths were studied. Differences between luminescence characteristics of series of samples obtained by two different methods are considered.