Оксидні матеріали електронної техніки – отримання, властивості, застосування.

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Start date: 2010Subject: search.filters.subject.single crystal

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    TSL properties of A2SiO5 and A2SiO5:Ce (A=Y, Lu) single rystals and single crystalline films
    (Видавництво Львівської політехніки, 2012) Bilski, P.; Twardak, A.; Zorenko, Y.; Zorenko, T.; Gorbenko, V.; Mandowska, E.; Mandowski, A.; Sidletskiy, O.
    In this work the comparative analysis of the thermostimulated luminescence (TSL) properties of various silicate crystals (undoped and Ce-doped Y2SiO5 (YSO) and Lu2SiO5 (LSO) single crystals (SC) and single crystalline films (SCF)) under excitation by alpha and beta particles, gamma quanta and daily light has been performed.
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    LPE growth and luminescent properties of ce doped A2SiO5:Ce (A = Lu, Gd, Y) Single crystalline films
    (Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.
    The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.
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    LPE growth and luminescent properties of Ce doped A2SiO5:Ce (A = Lu, Gd, Y) single crystalline films
    (Видавництво Львівської політехніки, 2012) Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Gerasymov, I.; Jary, V.; Mares, J.; Beitlerova, A.; Nikl, M.
    The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1-x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.
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    TSL properties of A2SiO5 and A2SiO5:Ce (A=Y, Lu) single crystals and single crystalline films
    (Видавництво Львівської політехніки, 2012) Bilski, P.; Twardak, A.; Zorenko, Y.; Gorbenko, V.; Mandowska, E.; Mandowski, A.; Sidletskiy, O.; Zorenko, T.
    In this work the comparative analysis of the thermostimulated luminescence (TSL) properties of various silicate crystals (undoped and Ce-doped Y2SiO5 (YSO) and Lu2SiO5 (LSO) single crystals (SC) and single crystalline films (SCF)) under excitation by alpha and beta particles, gamma quanta and daily light has been performed.
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    Effect of gamma irradiation on the dielectric properties of the TlGaS2 single crystal
    (Видавництво Львівської політехніки, 2012) Mustafaeva, S. N.; Asadov, M. M.; Ismaіlov, A. A.
    The real (ε') and imaginary (ε'') parts of complex dielectric permittivity and ac-conductivity (sаc) across the layers of TlGaS2 single crystal have been measured in the frequency range f = 5 × 104 – 3.5 × 107 Hz before and after gamma irradiation with doses Dg from 5 ´ 104 to 2.15 ´ 106 rad. It was shown that the accumulation of radiation dose in TlGaS2 single crystal leads to tangible increase in ε'' and to increase of ε'' dispersion. The main parameters of localized states in TlGaS2 single crystal before and after gamma irradiation were evaluated from high- frequency dielectric measurements.
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    Crystal growth of the (Ga1-xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals
    (Видавництво Львівської політехніки, 2012) Ivashchenko, І. А.; Halyan, V. V.; Danylyuk, І. V.; Pankevuch, V. Z.; Davydyuk, G. Ye.; Olekseyuk, І. D.
    The phase diagram of the Ga2Se3–In2Se3 system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R = 500 M ) and (Ga0.594In0.396Er0.01)2Se3 (R = 210 M ) was measured.
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    Growth and characterization of pure and Yb-Doped Ca9Y(VO4)7 single crystals
    (Видавництво Львівської політехніки, 2012) Kosmyna, M. B.; Mateychenko, P. V.; Nazarenko, B. P.; Puzikov, V. M.; Shekhovtsov, A. N.; Paszkowicz, W.; Ermakova, O.; Romanowski, P.; Yasukevich, A. S.; Kuleshov, N. V.; Kisel, V. E.; Gulevich, A. E.; Demesh, M. P.
    Pure and Yb-doped Ca9Y(VO4)7 (CYVO) single crystals were grown using the Czochralski method. Their crystal structure was determined using powder diffraction and the defect structure was characterized using highresolution diffraction. The undoped crystal is found to be composed of a transparent and an opaque parts. In the latter, yttrium-rich inclusions were detected. Spectral-kinetic characteristics of Yb3 -doped crystals is reported.