Ohmic contacts to n-type and p-type Gallium Antimonide Whiskers

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dc.citation.epage6
dc.citation.issue1
dc.citation.spage1
dc.contributor.affiliationLviv Polytechnic National University
dc.contributor.authorДружинін, Анатолій
dc.contributor.authorОстровський, Ігор
dc.contributor.authorХоверко, Юрій
dc.contributor.authorКутраков, Олексій
dc.contributor.authorЛях-Кагуй, Наталія
dc.contributor.authorЧемерис, Дмитро
dc.contributor.authorDruzhinin, Anatoly
dc.contributor.authorOstrovskii, Igor
dc.contributor.authorKhoverko, Yuriy
dc.contributor.authorKutrakov, Oleksiy
dc.contributor.authorLiakh-Kaguy, Natalia
dc.contributor.authorChemerys, Dmytro
dc.coverage.placenameЛьвів
dc.coverage.placenameLviv
dc.date.accessioned2023-04-25T10:51:50Z
dc.date.available2023-04-25T10:51:50Z
dc.date.created2021-05-05
dc.date.issued2021-05-05
dc.description.abstractЗа допомогою формувача струмових імпульсів створено омічні контакти до ниткоподібних кристалів антимоніду галію n-типу провідності. Їх ВАХ за низьких температур є лінійними незалежно від напряму пропускання струму, що дає змогу використовувати описаний метод для створення електричних контактів і дослідження електрофізичних характеристик ниткоподібних кристалів GaSb. Дослідження проведено для зразків діаметром 12 мкм та 20 мкм за температур 4,2 К та 77 К. Для приварювання омічних контактів до кристалів GaSb виготовлено предметний столик, на якому закріплено ванночку з мікропіччю. Як контактний матеріал використано золотий мікродріт діаметром 30 мкм, а вплавлення здійснено під шаром флюсу. Цей спосіб є різновидом вплавлення і одним із найпридатніших методів для створення контактів до ниткоподібних кристалів, вирощених методом газотранспортних реакцій.
dc.description.abstractThe ohmic contacts to the n-type conductivity gallium antimonide whiskers were created due to a current pulse shaper. It was established that I– V characteristics of GaSb whiskers at low temperatures are linear, regardless of the direction of current transmission. That allows using the investigated techniques to create electrical contacts and study their electrophysical characteristics. GaSb samples with a diameter of 12 μm and 20 μm were studied at temperatures 4.2 K and 77 K. A slide table with bath and microfurnace was made for welding ohmic contacts to GaSb whiskers. Gold microwire with a diameter of 30 μm was used as a contact material. The melting was carried out under the flux layer. It was revealed that the fusion is one of the most suitable methods for creating contacts to the whiskers grown by gas transport reactions.
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dc.format.pages6
dc.identifier.citationOhmic contacts to n-type and p-type Gallium Antimonide Whiskers / Anatoly Druzhinin, Igor Ostrovskii, Yuriy Khoverko, Oleksiy Kutrakov, Natalia Liakh-Kaguy, Dmytro Chemerys // Computational Problems of Electrical Engineering. — Lviv : Lviv Politechnic Publishing House, 2021. — Vol 11. — No 1. — P. 1–6.
dc.identifier.citationenDruzhinin A., Ostrovskii I., Khoverko Y., Kutrakov O., Liakh-Kaguy N., Chemerys D. (2021) Ohmic contacts to n-type and p-type Gallium Antimonide Whiskers. Computational Problems of Electrical Engineering (Lviv), vol. 11, no 1, pp. 1-6.
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/58451
dc.language.isoen
dc.publisherВидавництво Львівської політехніки
dc.publisherLviv Politechnic Publishing House
dc.relation.ispartofComputational Problems of Electrical Engineering, 1 (11), 2021
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dc.relation.referencesen[1] N. Rahimi, A. A. Aragon, O. S. Romero, D. M. Shima, T. J. Rotter, S. D. Mukherjee, G. Balakrishnan, and L. F. Lester, "Electrical and microstructure analysis of nickel-based lowresistance ohmic contacts to n-GaSb", APL Materials, no. 1(6), pp. 062105, 2013.
dc.relation.referencesen[2] A. A. Vasiliev, A. M. Mozharov, F. E. Komissarenko, G. E. Cirlin, D. A. Bouravlev, and I. S. Mukhin, "Researching the electrical properties of single A3B5 nanowires". In Journal of Physics: Conference Series, vol. 917, no. 3, pp. 032–042, November 2017.
dc.relation.referencesen[3] K. Ikossi, M. Goldenberg, and J. Mittereder, "Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb", Solid-State Electronics, no. 46(10), pp. 1627–1631, 2002.
dc.relation.referencesen[4] J. A. Robinson and S. E. Mohney, "An improved In-based ohmic contact to n-GaSb", Solid-State Electronics, no. 48(9), pp. 1667–1672, 2004.
dc.relation.referencesen[5] K. A. Dick, "A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires Progress in Crystal", Growth and Characterization of Materials, no. 54(3–4), pp. 138–173, 2008.
dc.relation.referencesen[6] A. Subekti, V. W. L. Chin, and T. L. Tansley, "Ohmic contacts to n-type and p-type GaSb", Solid-State Electronics, no. 39(3), pp. 329–332. 1996.
dc.relation.referencesen[7] A. Piotrowska, E. Kaminska, T. Piotrowski, S. Kasjaniuk, M. Guziewicz, S. Gierlotka, X. W. Lin, Z. Liliental-Weber, J. Washburn, and S. Kwiatkowski, "Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts", Acta Physica Polonica-Series A General Physics, no. 87(2), pp. 419–422, 1995.
dc.relation.referencesen[8] C. H. Lee, G. H. Lee, A. M. Van Der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, "Atomically thin p–n junctions with van der Waals heterointerfaces", Nature nanotechnology, no. 9(9), pp. 676, 2014.
dc.relation.referencesen[9] D. Jena, T. Fang, Q. Zhang, and H. Xing, "Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions", Applied Physics Letters, no. 93(11), pp. 112106, 2008.
dc.relation.referencesen[10] Y. Zhang, R. Suzuki, and Y. Iwasa, "Potential profile of stabilized field-induced lateral p–n junction in transition-metal dichalcogenides", ACS nano, no. 11(12), pp. 12583–12590, 2017.
dc.relation.referencesen[11] S. S. Gavryushin and P. A. Skvortsov, "Evaluation of output signal nonlinearity for semiconductor strain gage with ANSYS software", In Solid State Phenomena", Trans Tech Publications Ltd, Vol. 269, pp. 60-70, 2017.
dc.relation.referencesen[12] K. F. Brennan and A. S. Brown, Theory of modern electronic semiconductor devices. New York, USA: John Wiley, 2002.
dc.relation.referencesen[13] D. Maksimovic, A. M. Stankovic, V. J. Thottuvelil, and G. C. Verghese, "Modeling and simulation of power electronic converters", Proceedings of the IEEE, no. 89(6), pp. 898–912. 2001.
dc.relation.referencesen[14] I. Khytruk, A. Druzhinin, I. Ostrovskii, Y. Khoverko, N. Liakh-Kaguy, and K. Rogacki, "Properties of doped GaSb whiskers at low temperatures", Nanoscale research letters, no. 12(1), pp. 1–8, 2017.
dc.relation.referencesen[15] S. S. Warsaw, N. S. Liakh, and N. M. Stasiuk, "Nonlinear effects in point contacts metal-silicon, metal-silicon-germanium", Physics and Chemistry of Solid State, no. 2 (4), pp. 727–734, 2001.
dc.rights.holder© Національний університет „Львівська політехніка“, 2021
dc.subjectn-type and p-type conductivity gallium antimonide whiskers
dc.subjectohmic contacts
dc.subjectI–V characteristics
dc.titleOhmic contacts to n-type and p-type Gallium Antimonide Whiskers
dc.title.alternativeОмічні контакти до ниткоподібних кристалів антимоніду галію n-типу та p-типу провідності
dc.typeArticle

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