Surface Modification of Gallium Arsenide by Electrochemical Methods in Different Electrolyte Compositions

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dc.citation.epage271
dc.citation.issue2
dc.citation.spage262
dc.contributor.affiliationBerdyansk State Pedagogical University
dc.contributor.authorSuchikova, Yana
dc.contributor.authorKovachov, Sergii
dc.contributor.authorLazarenko, Andriy
dc.contributor.authorLopatina, Hanna
dc.contributor.authorTsybuliak, Natalia
dc.contributor.authorHurenko, Olha
dc.contributor.authorBohdanov, Ihor
dc.coverage.placenameЛьвів
dc.coverage.placenameLviv
dc.date.accessioned2024-02-12T08:30:42Z
dc.date.available2024-02-12T08:30:42Z
dc.date.created2023-03-16
dc.date.issued2023-03-16
dc.description.abstractВисвітлено дослідження модифікації поверхні n-GaAs методом електрохімічного травлення в різних композиціях електролітів. Досліджено можливість формування різних типів мікроморфології на ідентичних зразках GaAs, зокрема формування кристалографічних, дефектно-дислокаційних та ізотопних інтерфейсів.
dc.description.abstractWe present the study of the n-GaAs surface modification by the electrochemical etching in different electrolyte compositions. The possibility of forming the different micromorphology types on the identical GaAs samples, in particular the possibility of forming the crystallographic, defective-dislocation, and isotope interfaces, was investigated.
dc.format.extent262-271
dc.format.pages10
dc.identifier.citationSurface Modification of Gallium Arsenide by Electrochemical Methods in Different Electrolyte Compositions / Yana Suchikova, Sergii Kovachov, Andriy Lazarenko, Hanna Lopatina, Natalia Tsybuliak, Olha Hurenko, Ihor Bohdanov // Chemistry & Chemical Technology. — Lviv : Lviv Politechnic Publishing House, 2023. — Vol 17. — No 2. — P. 262–271.
dc.identifier.citationenSurface Modification of Gallium Arsenide by Electrochemical Methods in Different Electrolyte Compositions / Yana Suchikova, Sergii Kovachov, Andriy Lazarenko, Hanna Lopatina, Natalia Tsybuliak, Olha Hurenko, Ihor Bohdanov // Chemistry & Chemical Technology. — Lviv : Lviv Politechnic Publishing House, 2023. — Vol 17. — No 2. — P. 262–271.
dc.identifier.doidoi.org/10.23939/chcht17.02.262
dc.identifier.issn1996-4196
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/61254
dc.language.isoen
dc.publisherВидавництво Львівської політехніки
dc.publisherLviv Politechnic Publishing House
dc.relation.ispartofChemistry & Chemical Technology, 2 (17), 2023
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dc.relation.referencesen[25] Popov, A.I.; Balanzat, E.F Centre Production in CsI and CsI-Tl Crystals under Kr Ion Irradiation at 15 K. Nucl. Instrum. Methods Phys. Res. B 2000, 166, 545-549. https://doi.org/10.1016/S0168-583X(99)00789-2
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dc.rights.holder© Національний університет “Львівська політехніка”, 2023
dc.rights.holder© Suchikova Y., Kovachov S., Lazarenko A., Lopatina H., Tsybuliak N., Нurenko O., Bohdanov I., 2023
dc.subjectмікроморфологія
dc.subjectелектрохімічне травлення
dc.subjectелектрохімічна реакція
dc.subjectелектроліт
dc.subjectнапруга анодування
dc.subjectmicromorphology
dc.subjectelectrochemical etching
dc.subjectelectrochemical reaction
dc.subjectelectrolyte
dc.subjectanodizing voltage
dc.titleSurface Modification of Gallium Arsenide by Electrochemical Methods in Different Electrolyte Compositions
dc.title.alternativeМодифікація поверхні арсеніду галію електрохімічними методами в різних композиціях електролітів
dc.typeArticle

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Chemistry & Chemical Technology. – 2023. – Vol. 17, No. 2