Елементи теорії та прилади твердотілої електроніки. – 2002. – №458

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Вісник Національного університету «Львівська політехніка»

У Віснику опубліковано результати науково-дослідних робіт професорсько-викладацького складу, аспірантів та докторантів електрофізичного факультету Національного університету “Львівська політехніка”, науковців та викладачів із провідних вищих закладів освіти та академічних інститутів. У Віснику публікуються роботи провідних вчених Республіки Польща та Словаччини. Тематика робіт пов’язана з питаннями теорії фізики напівпровідників та напівпровідникових приладів, теоретичними і практичними проблемами мікроелектроніки та сенсорної техніки. Для викладачів, наукових співробітників, аспірантів, інженерів, студентів.

Вісник Національного університету "Львівська політехніка" : [збірник наукових праць] / Міністерство освіти і науки України, Національний університет "Львівська політехніка. – Львів : Видавництво Національного університету «Львівська політехніка», 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки / відповідальний редактор Я. С. Буджак. – 291 с. : іл.


Recent Submissions

Now showing 1 - 20 of 54
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    Aspects of EMC- Evaluation of LIN- Transceivers
    (Видавництво Національного університету «Львівська політехніка», 2002) Körber, B.; Sperling, D.; Kalita, W.; Sabat, W.; FTZ e.V. an der Westsächsischen Hochschule Zwickau (FH), University of Applied Sciences, Zwickau; Rzeszów University of Technology
    With this paper a proposal for EMC- Evaluation of LIN (Line Integrated Network)-Transceiver is presented. It is based on EMC- standards for semiconductors and automotive applications and can be applied to Stand Alone LIN Transceiver and Embedded Systems with an on chip LIN Transceiver (Automotive System Basis Chips). At this time there are positive experiences by using this evaluation proposal on LIN Transceivers from different manufactures and samples in the last two years. It can be shown, that the results of the measurements have a very good reproducibility. The proposal for EMC- Evaluation of LIN- Transceivers is based on the same procedure as EMC- Evaluation of CAN – Transceivers, witch is successful implemented in Transceiver evaluation for automotive applications and has a correlation to vehicle measurements.
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    Epitaxial garnet films for microwave electronics
    (Видавництво Національного університету «Львівська політехніка», 2002) Yushchuk, Stepan; Yuryev, Sergij; Lviv Polytechnic National University
    The technology of growth the substituted yttrium-iron monocrystalline garnet films (YIG) on the monocrystalline substrates of the gallium-gadolinium garnet (GGG) with the orientation (111) by the isotermal dipping method of liquid phase epitaxy was carried out. The penetration of La3+ ions into structure of YIG leads to decreasing of lattice mithmatch between the ferrite film and substrate .The control of growth speed of the epitaxial films on the whole process of growing and application of the compulsory mixing of melt-solution of oxides enables to receive the films with homogeneous thickness and small magnetic losses. The penetration into the YIG structure films the non-magnetic Ga3+ and La3+ ions considerably improves their thermostabillity without an essential increasing of the ferromagnetic resonance linewidth (FMR).
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    Using of moment method for parasitic parameters of printed circuits in planar structures
    (Видавництво Національного університету «Львівська політехніка», 2002) Sabat, Wiesław; Kalita, Włodzimierz; Wisz, Bogusław; Sperling, Dieter; Rzeszów University of Technology
    This paper presents using of moment methodfor printed circuit residual parameters’ calculation in single-layer planar structures. In accordance to the method’s assumptions, the relations specifying the potential coefficients for printed circuit with arbitral geometric parameters were determined. Using the Mathcad program, basing on the relations as referred to above, the program was developed for calculation of unitary matrices of parasitic capacities and inductances of printed circuit of mutually parallel lines. In order to verify the developed program operation, the hybrid test printed circuits with different geometric parameters were made. The correctness of calculation procedures within the developed program was experimentally verified using the direct measurement for the capacity and the indirect measurement for the inductance.
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    Limitation of third harmonic of supply network current in phase control systems of commutator motors
    (Видавництво Національного університету «Львівська політехніка», 2002) Gąska, Dariusz; Kalita, Włodzimierz; Zając, Kazimierz; HYBRES Electronics Ltd., Rzeszów; Rzeszów University of Technology, Dept. of Electronic and Communication Systems
    This paper presents simple non-conventional circuit design for the third harmonic limitation of power supply current that is drawn by the medium power commutator motor with the phase control. The proposed solution features a simple design, low manufacture costs and operational effectiveness.
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    Modeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers
    (Видавництво Національного університету «Львівська політехніка», 2002) Pavlysh, V.; Danchyshyn, I.; Korzh, R.; Dronyuk, M.; Lviv Polytechnic National University
    The new approach to the construction of the microtechnology physical-technological models is proposed in the present work. This approach allows us to analyse the processes of the IC and hybride IC epitaxial, resistive and conductive structures growth and formation of their electrophysical and mechanical parameters. We elaborated the model describing charge carriers concentration profile of inhomogeneous epitaxial structures that were grown under different technological conditions.
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    Peculiarities of electrical discharge in the Penning’s cell with sectional anode
    (Published by Lviv Polytechnic National University, 2002) Shandra, Zenon; Danilina, Tamara; Lviv Polytechnic National University; Tomsk State University of Control Systems and Radioelectronics
    Ion sputtering can be used for receiving of thin films of high temperature superconductors specifically on the base of YBaCuO ceramics [1]. But there is considerable influence of substrate placement relatively target erosion zone on the properties of films at usage of magnetron discharge of direct current. It can be explained by bombardment of substrate by ions, which appear at target material sputtering [2]. From the target erosion zone the ion stream on the substrate is maximum. To improve the properties of films the substrate is placed from one side of erosion zone but the stochiometric structure and uniformity of the film thickness on the substrate become worse [3]. To eliminate bombardment of substrate by ions, Penning’s discharge can be used. In this case two cathodes (targets) are parallel and ion streams from cathodes are moving towards. The substrate is outside discharge what allows to eliminate ion component of stream on the substrate [4].
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    Transient temperature field in thick-film multilayer structures
    (Видавництво Національного університету «Львівська політехніка», 2002) Błąd, Grzegorz; Hotra, Zenon; Klepacki, Dariusz; Potencki, Jerzy; Rzeszów University of Technology; Lviv Polytechnic National University
    The paper presents two methods of temperature field simulation in thick-film multilayer structure with local pulse heating. The first method is based on the equivalent electrical model of heat transfer. Simulations have been made using PSPICE program. The basis of the second one is solving the heat equation through integral transforms. Calculations were made on example thick-film laser power detector.
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    Dynamics of modulation spectrums of piezophotoconductivity of monopolar semiconductor
    (Видавництво Національного університету «Львівська політехніка», 2002) Stakhira, Pavlo; Stakhira, Roman; Rzeszów University of Technology; Lviv Polytechnic National University
    Piezophotoconductivity is being analyzed - phenomenon stimulated by common action of light from spectrum region that corresponds to interband absorption and strain. The case of interband optical absorption of the system that is under the influence of adiabatic low frequency disturbance, caused by pressure, and high frequency disturbance, caused by light action, is considered. It is shown that absorption factor of a system, which is under an action of combined disturbance, is a periodic time function with the period determined by low frequency disturbance. The equation of dynamics of nonequilibrium current carriers' concentration in the conditions of acoustic-light excitation was obtained. The peculiarities of dynamics of spectrum of interband absorption of the strained semiconductor were considered.
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    Optical, elastical and piezooptical properties of the β-BaB2O4 and Li2B4O7 borate crystals
    (Видавництво Національного університету «Львівська політехніка», 2002) Adamiv, V. T.; Burak, Ya. V.; Martynyuk-Lototska, I. Yu.; Kostyrko, M. E.; Vlokh, R. O.; Romanyuk, G. M.; Shranz, W.; Institute of the Physical Optics, Ukraine; Lviv Polytechnic National University; Institut fur Experimental Physic, Austria
    The optical, elastic and piezooptical properties of the borate crystals have been investigated. The dispersions of the indexes refraction of the Li2B4O7 crystals have been determinated in wavelength range 350 - 650 nm. The results of the measurement velocity of the longitudinal and transverse ultrasonic waves on borate crystals are presented. Using ultrasonic velocity measurements the components of the elastic matrix Cmn of these crystals have been determined. Using the determined values of the elastooptical tensor components the acoustooptical quality M2 of β-BaB2O4 crystals has been calculated
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    Investigation of indium antimonide microcrystals irradiated with fast neutrons
    (Видавництво Національного університету «Львівська політехніка», 2002) Bolshakova, I.; Leroy, C.; Kumada, M.; Lviv Polytechnic National University; Laboratory R-J.A.-Levesque, Montreal University, Canada; National Institute of Radiological Sciences, Japan
    Microcrystals of III-V semiconductor compound indium antimonide were obtained by means of complex doping in the growth process. Such compounds are stable after irradiation with fast neutron fluences up to 1016 n⋅cm-2. Magnetic field microsensors developed on their base are applied in magnetic measuring systems for charged particle accelerators and in the space instrumentation building.
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    About the nature of the main parameters of temperature sensors
    (Видавництво Національного університету «Львівська політехніка», 2002) Budjak, Jaroslav; Hotra, Oleksandra; Lviv Polytechnic National University; Lviv State Medical University
    The results of study of the nature of sensor materials properties are given in this paper. For study of the nature of conductivity and other kinetic properties of semiconductor materials modern kinetic theory was used. The theory is based on statistical sum of large nonequilibrium ensemble of charge carrier gas particles in semiconductors.
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    Simulation of output current-voltage characteristics of mos transistors formed on «silicon-on insulator» structures
    (Видавництво Національного університету «Львівська політехніка», 2002) Kenyo, Halyna; Petrovych, Ihor; Lviv Polytechnic National University
    The current-voltage characteristics of SOI MOS-transistors created in thick (0,5 μm) silicon films by recrystallized laser beam is calculated. A equivalent circuit for computation of drain current includes - MOS-transistor and horizontal bipolar transistor, which form simultaneously in technological process. The peculiarity of formed bipolar transistor is that its base isolated by layers of undergate and insulating oxides. For calculation of the current of the bipolar transistor the potential of “floating substract” (the under-channel region in which the holes accumulated under drain voltage), which causes of sharp increasing of drain current in the range of small drain voltage, is obtained. The characteristics obtained have abrupt current drain region, known as “kink-effect", which can be described as summed influence of both transistors and at the same time the avalanche formation of charge carriers caused by ionisation under influence of strong electric field does not play essential role. Experimental current-voltage characteristics satisfactorily describe by the given model.
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    Modeling of electric field distribution in the reflective cholesteric liquid crystal display
    (Видавництво Національного університету «Львівська політехніка», 2002) Lopatynsky, Ivan; Mikityuk, Zenovij; Cherpak, Vladyslav; Fechan, Andrew; Lviv Polytechnic National University
    Modeling the electrode structure of display devices is considered in present paper. The modeling of electric field distribution that applied in a different electrode structure in an anisotropy medium was done.Carried out modeling of electric field distribution in the proposed liquid crystal cell construction of the LC display suggested us to use such electrode structure in the reflective LC display on the base of cholesteric liquid crystals
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    Electromagnetic field strength sensor for traffic-safety security
    (Видавництво Національного університету «Львівська політехніка», 2002) Sopilnyk, Lubomir; Lviv Polytechnic National University
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    Structure methods of compensation of communication lines influence by current in active resistance simulators
    (Видавництво Національного університету «Львівська політехніка», 2002) Bojko, Oksana; Hotra, Oleksandra; Stolyarchuk, Petro; Lviv Polytechnic National University; Lviv State Medical University, Department of biophysics
    The structure methods of compensation of communication lines influence by current in four-wire active resistance simulators with transmission functions Rsim=R0μ, Rsim=R0(1-μ) are considered.
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    Efficiency improvement of microelectronic devices for spectral transformation of signals
    (Видавництво Національного університету «Львівська політехніка», 2002) Dorosh, Natalija; Kuchmiy, Galyna; Lviv Polytechnic National University
    The methods of increase of efficiency of microelectronic devices for spectral transformation of signals are shown, at the expense of use of algorithms of fast spectral transformations with active use of pauses between receipt of readout of a researched signal. The structural organization and functionalities of the digital microprocessor NM6403, on the basis of which it is possible to realize algorithms of spectral transformations in different bases of functions is given.
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    Module for fuel consumption measurement
    (Видавництво Національного університету «Львівська політехніка», 2002) Drumea, Petrin; Comes, Mircea; Mirea, Adrian; Hydraulic and Pneumatic Research Institute, Romania
    Today is important for transport companies to monitorize fuel consumption. To perform this task is necessary to have on the car a black box inaccessible to driver. This can be done using a flow transducer coupled to a smart electronic module. The authors designed a volumetric rotational transducer that contains a Hall sensor. The pulses generated by this sensor as well as driving wheels rotation information are used by an electronic module to calculate total fuel consumption.
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    Eelectrooptical devices based on the structure of planar waveguide – smectic C* - planar waveguide
    (Видавництво Національного університету «Львівська політехніка», 2002) Mikityuk, Zenon; Dalanbayar, Bolormaa; Lviv Polytechnic National University; Department of Physics, Mongolian Academy of Science, Ulaanbaatar, Mongolia
    Unique optical properties of chiral liquid crystals allow to use them in different electrooptical devices. It is possible to filtrate the light by length of a wave with the help of structures waveguide - liquid crystal - waveguide. Besides the electrical control of such structure enables to use the planar waveguide – smectic C* - planar waveguide structure as the switch without the complex constructive solutions.
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    Model of debactericidal ultra-violet radiator with discharge plasma radiated body
    (Видавництво Національного університету "Львівська політехніка", 2002) Kozhuhar, Alexander; Chuchman, Ivan; Slezin, Ivan; Lviv Polytechnic National University
    Is offered a mathematical model and modelling algorithm of ultra-violet radiators attached to designing sterilization al and debactericidal devices with cylindrical discharge-plasma radiated bodies, that provides is thrashed a level and evenness of working zone irradiation
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    Dynamic properties of humidity sensor with active layer based on composite material: PVA + Sn
    (Видавництво Національного університету "Львівська політехніка", 2002) Hotra, Zenon; Proszak, Danuta; Melnyk, Oleg; Woś, Bogdan; Lviv Polytechnic National University; Rzeszów University of Technology, Dept. of Electronic and Communication Systems; Rzeszów University of Technology, Department of Heating and Climatization; Rzeszów University of Technology, Department of Physics
    This paper presents results of the researches upon humidity sensors based on humidity sensitive composite material: PVA + Sn. Construction of the sensor is presented. Influence of electrodes’ configuration and arrangement on static characteristics and dynamic properties of the sensors are also included.