Investigation of indium antimonide microcrystals irradiated with fast neutrons
| dc.citation.journalTitle | Елементи теорії та прилади твердотілої електроніки | |
| dc.contributor.affiliation | Lviv Polytechnic National University | uk_UA |
| dc.contributor.affiliation | Laboratory R-J.A.-Levesque, Montreal University, Canada | uk_UA |
| dc.contributor.affiliation | National Institute of Radiological Sciences, Japan | uk_UA |
| dc.contributor.author | Bolshakova, I. | |
| dc.contributor.author | Leroy, C. | |
| dc.contributor.author | Kumada, M. | |
| dc.coverage.country | UA | uk_UA |
| dc.coverage.placename | Львів | uk_UA |
| dc.date.accessioned | 2018-09-12T07:55:14Z | |
| dc.date.available | 2018-09-12T07:55:14Z | |
| dc.date.issued | 2002 | |
| dc.description.abstract | Microcrystals of III-V semiconductor compound indium antimonide were obtained by means of complex doping in the growth process. Such compounds are stable after irradiation with fast neutron fluences up to 1016 n⋅cm-2. Magnetic field microsensors developed on their base are applied in magnetic measuring systems for charged particle accelerators and in the space instrumentation building. | uk_UA |
| dc.format.pages | 241–246 | |
| dc.identifier.citation | Bolshakova I. Investigation of indium antimonide microcrystals irradiated with fast neutrons / I. Bolshakova, C. Leroy, M. Kumada // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 241–246. – Bibliography: 4 titles. | uk_UA |
| dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/42618 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Видавництво Національного університету «Львівська політехніка» | uk_UA |
| dc.relation.references | [1] Bolshakova I. Improvement of radiation resistance of magnetic field microsensors // Sensors & $ % :" – 1999. - V.76. - P.152-155. [2] Bolshakova I., Moskovets T., Krukovsky S., Zayachuk D. Radiation resistant microcrystals and thin films of III-V semiconductors // Materials Science & Engineering. – 2000. – B 69-70. - P. 441-443. [3] Bolshakova I., Koptsev P., Melnyk I., Moskovets M., Krukovsky S., Zayachuk D. Control of parameters of III-V compound microcrystals and epitaxial layers by means of complex doping // Crystal Research and Technology. - 2001. V. 36. - )-10. – P. 989-997. [4] Zaitov F., Isayev F., Polyakov A., Kuzmin A. Influence of penetrating radiation on the properties of indium antimonide and indium arsenide. – Baku, 1984. – 205 p. | uk_UA |
| dc.rights.holder | © I. Bolshakova, C. Leroy, M. Kumada, 2002 | uk_UA |
| dc.title | Investigation of indium antimonide microcrystals irradiated with fast neutrons | uk_UA |
| dc.type | Article | uk_UA |
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