Investigation of indium antimonide microcrystals irradiated with fast neutrons

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dc.citation.journalTitleЕлементи теорії та прилади твердотілої електроніки
dc.contributor.affiliationLviv Polytechnic National Universityuk_UA
dc.contributor.affiliationLaboratory R-J.A.-Levesque, Montreal University, Canadauk_UA
dc.contributor.affiliationNational Institute of Radiological Sciences, Japanuk_UA
dc.contributor.authorBolshakova, I.
dc.contributor.authorLeroy, C.
dc.contributor.authorKumada, M.
dc.coverage.countryUAuk_UA
dc.coverage.placenameЛьвівuk_UA
dc.date.accessioned2018-09-12T07:55:14Z
dc.date.available2018-09-12T07:55:14Z
dc.date.issued2002
dc.description.abstractMicrocrystals of III-V semiconductor compound indium antimonide were obtained by means of complex doping in the growth process. Such compounds are stable after irradiation with fast neutron fluences up to 1016 n⋅cm-2. Magnetic field microsensors developed on their base are applied in magnetic measuring systems for charged particle accelerators and in the space instrumentation building.uk_UA
dc.format.pages241–246
dc.identifier.citationBolshakova I. Investigation of indium antimonide microcrystals irradiated with fast neutrons / I. Bolshakova, C. Leroy, M. Kumada // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 241–246. – Bibliography: 4 titles.uk_UA
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/42618
dc.language.isoenuk_UA
dc.publisherВидавництво Національного університету «Львівська політехніка»uk_UA
dc.relation.references[1] Bolshakova I. Improvement of radiation resistance of magnetic field microsensors // Sensors & $ % :" – 1999. - V.76. - P.152-155. [2] Bolshakova I., Moskovets T., Krukovsky S., Zayachuk D. Radiation resistant microcrystals and thin films of III-V semiconductors // Materials Science & Engineering. – 2000. – B 69-70. - P. 441-443. [3] Bolshakova I., Koptsev P., Melnyk I., Moskovets M., Krukovsky S., Zayachuk D. Control of parameters of III-V compound microcrystals and epitaxial layers by means of complex doping // Crystal Research and Technology. - 2001. V. 36. - )-10. – P. 989-997. [4] Zaitov F., Isayev F., Polyakov A., Kuzmin A. Influence of penetrating radiation on the properties of indium antimonide and indium arsenide. – Baku, 1984. – 205 p.uk_UA
dc.rights.holder© I. Bolshakova, C. Leroy, M. Kumada, 2002uk_UA
dc.titleInvestigation of indium antimonide microcrystals irradiated with fast neutronsuk_UA
dc.typeArticleuk_UA

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Елементи теорії та прилади твердотілої електроніки. – 2002. – №458