Thermal residual stresses in thick film structures resistor on dielectric – FEM analysis

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dc.citation.journalTitleЕлементи теорії та прилади твердотілої електроніки
dc.contributor.affiliationLviv Polytechnic National Universityuk_UA
dc.contributor.affiliationRzeszów University of Technologyuk_UA
dc.contributor.affiliationWarsaw University of Technologyuk_UA
dc.contributor.affiliationInstitute of Electronic Materials Technologyuk_UA
dc.contributor.authorJakubowska, Małgorzata
dc.contributor.authorGolański, Dariusz
dc.contributor.authorKaliński, Dariusz
dc.contributor.authorHotra, Zenon
dc.coverage.countryUAuk_UA
dc.coverage.placenameЛьвівuk_UA
dc.date.accessioned2018-08-15T12:13:29Z
dc.date.available2018-08-15T12:13:29Z
dc.date.issued2002
dc.description.abstractThis paper presents the results of calculations performed using the finite element method (FEM) which include a comparative analysis of residual stress state induced in thick film structures resistors on dielectrics which differ from one another in materials used to perform dielectric layers. This analysis permitted us to test the materials examined in terms of the level and distribution of the residual stresses developed in the structure.uk_UA
dc.format.pages32–37
dc.identifier.citationThermal residual stresses in thick film structures resistor on dielectric – FEM analysis / M. Jakubowska, D. Golański, D. Kaliński, Z. Hotra // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки – С. 32–37. – Bibliography: 11 titles.uk_UA
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/42486
dc.language.isoenuk_UA
dc.publisherВидавництво Національного університету "Львівська політехніка"uk_UA
dc.relation.references[1] Pitt K.E.G., Chemical constitution and conduction mechanisms in thick film resistors, Journal of Materials Science: Materials in Electronics, 7 (1996), 187-190. [2] Jakubowska M., Pitt K., Influence. of the contacts and firing process on the properties of thick film resistors on alumina and dielectrics, Journal of Materials Science: Materials in Electronics, no 6, 1995, s.75-78. [3] Bober B., Pitt K. E.G., Further studies of teh interaction between thick film resistors and dielectric, Microelectronics J., 18, 1987, no 1, p.35-43. [4] Bober B., Pitt K.E.G., Licznerski B.W., Bober Z., The effect of constituent exchange on the conduction mechanisms of thick film resistors on dielectrics, Mat. Sci., 1987, no 3-4, p.193-198. [5] Achmatowicz S., Jakubowska M., Zwierkowska E., Szczytko B., 0 ! * $ izolacyjna, Patent RP 162992 (in Polish) [6] Jakubowska M.,et al., Proc. of The New Thick Film Paste Based on Cubic Boron Nitride, Proc. of XXVIth Conf. of IMAPS Poland Chapter, Warsaw, 25-27 Sept. 2002, p. 70-74. [7] Achmatowicz S., Jakubowska M., Zwierkowska E., Osieczkin S., Sposób otrzymywania proszku srebrowego, palladowego i palladowo-srebrowego, Patent RP Nr 170772 (in Polish). 89: 7 # ' " 0 & , Thick Film Structure Resistor on Dielectric, Wisnik Nacionalnowo Uniwersitetu Lwviwska Politechnika, vol.427, s.73-82 [9] D.Kalinski: Thermal residual stress state in laser diode/ heatsink joint systems depending on the properties of the heatsink material. FEM analysis. 7th European Con. On Advanced Mat. And Processes, Euromat 2001,Rimini- Italy 10-14June. [10] Goldsmith A., Waterman T.E., Hirchorn H.J.: Handbook of thermophysical properties of solid materials. New York (1991). [11] M.P.D’Evelyn, K.Zgone: Elastic properties of polycrystalline cubic boron nitride and diamond by dynamic resonance measurements. GE Research & Development Center, 97CRD030, March 1997uk_UA
dc.rights.holder© Małgorzata Jakubowska, Dariusz Golański, Dariusz Kaliński, Zenon Hotra, 2002uk_UA
dc.titleThermal residual stresses in thick film structures resistor on dielectric – FEM analysisuk_UA
dc.typeArticleuk_UA

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Елементи теорії та прилади твердотілої електроніки. – 2002. – №458