Modeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers

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dc.citation.journalTitleЕлементи теорії та прилади твердотілої електроніки
dc.contributor.affiliationLviv Polytechnic National Universityuk_UA
dc.contributor.authorPavlysh, V.
dc.contributor.authorDanchyshyn, I.
dc.contributor.authorKorzh, R.
dc.contributor.authorDronyuk, M.
dc.coverage.countryUAuk_UA
dc.coverage.placenameЛьвівuk_UA
dc.date.accessioned2018-09-12T08:06:14Z
dc.date.available2018-09-12T08:06:14Z
dc.date.issued2002
dc.description.abstractThe new approach to the construction of the microtechnology physical-technological models is proposed in the present work. This approach allows us to analyse the processes of the IC and hybride IC epitaxial, resistive and conductive structures growth and formation of their electrophysical and mechanical parameters. We elaborated the model describing charge carriers concentration profile of inhomogeneous epitaxial structures that were grown under different technological conditions.uk_UA
dc.format.pages267–271
dc.identifier.citationModeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers / V. Pavlysh, I. Danchyshyn, R. Korzh, M. Dronyuk // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 267–271. – Bibliography: 2 titles.uk_UA
dc.identifier.urihttps://ena.lpnu.ua/handle/ntb/42623
dc.language.isoenuk_UA
dc.publisherВидавництво Національного університету «Львівська політехніка»uk_UA
dc.relation.references1. Voronin V., Pavlysh V., Dronyuk M, Danchyshyn I. Modelling of Epitaxial Films and Structures, Growing of Gas Phase //First Int. Conference on Epitaxial Crystal Growth. April 1- 7, 1990, Budapest, (.351-353. 2. Pavlysh V., Korzh R., Dronyuk M., Danchyshyn I. Integrated Circuit Film Layers Characteristics Modelling //Abstracts, Information & Participants, Ukrainian- French Symposium "Condensed Matter: Scien"e and Industry", Lviv, February 20-27, 1993, (.56.uk_UA
dc.rights.holder© V. Pavlysh, I. Danchyshyn, R. Korzh, M. Dronyuk, 2002uk_UA
dc.subjectsemiconductoruk_UA
dc.subjectmodeluk_UA
dc.subjectgrowthuk_UA
dc.subjectelectroconductivityuk_UA
dc.titleModeling of concentration profiles of charge carriers in inhomogeneous epitaxial layersuk_UA
dc.typeArticleuk_UA

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Елементи теорії та прилади твердотілої електроніки. – 2002. – №458