Елементи теорії та прилади твердотілої електроніки. – 2002. – №458
Permanent URI for this collectionhttps://ena.lpnu.ua/handle/ntb/42439
Вісник Національного університету «Львівська політехніка»
У Віснику опубліковано результати науково-дослідних робіт професорсько-викладацького складу, аспірантів та докторантів електрофізичного факультету Національного університету “Львівська політехніка”, науковців та викладачів із провідних вищих закладів освіти та академічних інститутів. У Віснику публікуються роботи провідних вчених Республіки Польща та Словаччини. Тематика робіт пов’язана з питаннями теорії фізики напівпровідників та напівпровідникових приладів, теоретичними і практичними проблемами мікроелектроніки та сенсорної техніки. Для викладачів, наукових співробітників, аспірантів, інженерів, студентів.
Вісник Національного університету "Львівська політехніка" : [збірник наукових праць] / Міністерство освіти і науки України, Національний університет "Львівська політехніка. – Львів : Видавництво Національного університету «Львівська політехніка», 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки / відповідальний редактор Я. С. Буджак. – 291 с. : іл.
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Item Aspects of EMC- Evaluation of LIN- Transceivers(Видавництво Національного університету «Львівська політехніка», 2002) Körber, B.; Sperling, D.; Kalita, W.; Sabat, W.; FTZ e.V. an der Westsächsischen Hochschule Zwickau (FH), University of Applied Sciences, Zwickau; Rzeszów University of TechnologyWith this paper a proposal for EMC- Evaluation of LIN (Line Integrated Network)-Transceiver is presented. It is based on EMC- standards for semiconductors and automotive applications and can be applied to Stand Alone LIN Transceiver and Embedded Systems with an on chip LIN Transceiver (Automotive System Basis Chips). At this time there are positive experiences by using this evaluation proposal on LIN Transceivers from different manufactures and samples in the last two years. It can be shown, that the results of the measurements have a very good reproducibility. The proposal for EMC- Evaluation of LIN- Transceivers is based on the same procedure as EMC- Evaluation of CAN – Transceivers, witch is successful implemented in Transceiver evaluation for automotive applications and has a correlation to vehicle measurements.Item Epitaxial garnet films for microwave electronics(Видавництво Національного університету «Львівська політехніка», 2002) Yushchuk, Stepan; Yuryev, Sergij; Lviv Polytechnic National UniversityThe technology of growth the substituted yttrium-iron monocrystalline garnet films (YIG) on the monocrystalline substrates of the gallium-gadolinium garnet (GGG) with the orientation (111) by the isotermal dipping method of liquid phase epitaxy was carried out. The penetration of La3+ ions into structure of YIG leads to decreasing of lattice mithmatch between the ferrite film and substrate .The control of growth speed of the epitaxial films on the whole process of growing and application of the compulsory mixing of melt-solution of oxides enables to receive the films with homogeneous thickness and small magnetic losses. The penetration into the YIG structure films the non-magnetic Ga3+ and La3+ ions considerably improves their thermostabillity without an essential increasing of the ferromagnetic resonance linewidth (FMR).Item Using of moment method for parasitic parameters of printed circuits in planar structures(Видавництво Національного університету «Львівська політехніка», 2002) Sabat, Wiesław; Kalita, Włodzimierz; Wisz, Bogusław; Sperling, Dieter; Rzeszów University of TechnologyThis paper presents using of moment methodfor printed circuit residual parameters’ calculation in single-layer planar structures. In accordance to the method’s assumptions, the relations specifying the potential coefficients for printed circuit with arbitral geometric parameters were determined. Using the Mathcad program, basing on the relations as referred to above, the program was developed for calculation of unitary matrices of parasitic capacities and inductances of printed circuit of mutually parallel lines. In order to verify the developed program operation, the hybrid test printed circuits with different geometric parameters were made. The correctness of calculation procedures within the developed program was experimentally verified using the direct measurement for the capacity and the indirect measurement for the inductance.Item Limitation of third harmonic of supply network current in phase control systems of commutator motors(Видавництво Національного університету «Львівська політехніка», 2002) Gąska, Dariusz; Kalita, Włodzimierz; Zając, Kazimierz; HYBRES Electronics Ltd., Rzeszów; Rzeszów University of Technology, Dept. of Electronic and Communication SystemsThis paper presents simple non-conventional circuit design for the third harmonic limitation of power supply current that is drawn by the medium power commutator motor with the phase control. The proposed solution features a simple design, low manufacture costs and operational effectiveness.Item Modeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers(Видавництво Національного університету «Львівська політехніка», 2002) Pavlysh, V.; Danchyshyn, I.; Korzh, R.; Dronyuk, M.; Lviv Polytechnic National UniversityThe new approach to the construction of the microtechnology physical-technological models is proposed in the present work. This approach allows us to analyse the processes of the IC and hybride IC epitaxial, resistive and conductive structures growth and formation of their electrophysical and mechanical parameters. We elaborated the model describing charge carriers concentration profile of inhomogeneous epitaxial structures that were grown under different technological conditions.Item Peculiarities of electrical discharge in the Penning’s cell with sectional anode(Published by Lviv Polytechnic National University, 2002) Shandra, Zenon; Danilina, Tamara; Lviv Polytechnic National University; Tomsk State University of Control Systems and RadioelectronicsIon sputtering can be used for receiving of thin films of high temperature superconductors specifically on the base of YBaCuO ceramics [1]. But there is considerable influence of substrate placement relatively target erosion zone on the properties of films at usage of magnetron discharge of direct current. It can be explained by bombardment of substrate by ions, which appear at target material sputtering [2]. From the target erosion zone the ion stream on the substrate is maximum. To improve the properties of films the substrate is placed from one side of erosion zone but the stochiometric structure and uniformity of the film thickness on the substrate become worse [3]. To eliminate bombardment of substrate by ions, Penning’s discharge can be used. In this case two cathodes (targets) are parallel and ion streams from cathodes are moving towards. The substrate is outside discharge what allows to eliminate ion component of stream on the substrate [4].Item Transient temperature field in thick-film multilayer structures(Видавництво Національного університету «Львівська політехніка», 2002) Błąd, Grzegorz; Hotra, Zenon; Klepacki, Dariusz; Potencki, Jerzy; Rzeszów University of Technology; Lviv Polytechnic National UniversityThe paper presents two methods of temperature field simulation in thick-film multilayer structure with local pulse heating. The first method is based on the equivalent electrical model of heat transfer. Simulations have been made using PSPICE program. The basis of the second one is solving the heat equation through integral transforms. Calculations were made on example thick-film laser power detector.Item Dynamics of modulation spectrums of piezophotoconductivity of monopolar semiconductor(Видавництво Національного університету «Львівська політехніка», 2002) Stakhira, Pavlo; Stakhira, Roman; Rzeszów University of Technology; Lviv Polytechnic National UniversityPiezophotoconductivity is being analyzed - phenomenon stimulated by common action of light from spectrum region that corresponds to interband absorption and strain. The case of interband optical absorption of the system that is under the influence of adiabatic low frequency disturbance, caused by pressure, and high frequency disturbance, caused by light action, is considered. It is shown that absorption factor of a system, which is under an action of combined disturbance, is a periodic time function with the period determined by low frequency disturbance. The equation of dynamics of nonequilibrium current carriers' concentration in the conditions of acoustic-light excitation was obtained. The peculiarities of dynamics of spectrum of interband absorption of the strained semiconductor were considered.Item Optical, elastical and piezooptical properties of the β-BaB2O4 and Li2B4O7 borate crystals(Видавництво Національного університету «Львівська політехніка», 2002) Adamiv, V. T.; Burak, Ya. V.; Martynyuk-Lototska, I. Yu.; Kostyrko, M. E.; Vlokh, R. O.; Romanyuk, G. M.; Shranz, W.; Institute of the Physical Optics, Ukraine; Lviv Polytechnic National University; Institut fur Experimental Physic, AustriaThe optical, elastic and piezooptical properties of the borate crystals have been investigated. The dispersions of the indexes refraction of the Li2B4O7 crystals have been determinated in wavelength range 350 - 650 nm. The results of the measurement velocity of the longitudinal and transverse ultrasonic waves on borate crystals are presented. Using ultrasonic velocity measurements the components of the elastic matrix Cmn of these crystals have been determined. Using the determined values of the elastooptical tensor components the acoustooptical quality M2 of β-BaB2O4 crystals has been calculatedItem Investigation of indium antimonide microcrystals irradiated with fast neutrons(Видавництво Національного університету «Львівська політехніка», 2002) Bolshakova, I.; Leroy, C.; Kumada, M.; Lviv Polytechnic National University; Laboratory R-J.A.-Levesque, Montreal University, Canada; National Institute of Radiological Sciences, JapanMicrocrystals of III-V semiconductor compound indium antimonide were obtained by means of complex doping in the growth process. Such compounds are stable after irradiation with fast neutron fluences up to 1016 n⋅cm-2. Magnetic field microsensors developed on their base are applied in magnetic measuring systems for charged particle accelerators and in the space instrumentation building.